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12 May 2016

MACOM to demo Gen4 GaN-on-Si portfolio at IMS

In booth 939 at IEEE's International Microwave Symposium (IMS) 2016 in San Francisco (24-26 May), MACOM Technology Solutions Holdings Inc of Lowell, MA, USA (which makes semiconductors, components and subassemblies for analog RF, microwave, millimeter-wave and photonic applications) is showcasing its GaN-on-Si (gallium nitride on silicon) portfolio and other high-performance products, optimized for commercial, industrial, scientific and medical RF applications: 

  • a GaN 60W average-power Doherty module live demonstration with Xilinx DPD (digital pre-distortion) for base-station applications;
  • a GaN for RF energy applications;
  • new E-band TX and RX SMD modules and portfolio of wideband millimeter-wave products for addressing the emerging 5G access and backhaul markets;
  • high-power (120W), broadband PIN diode transmit-receive (T/R) switch demonstrating low TX IL, low RX IL, high RX isolation, small physical size, plastic SMT package across DC-1GHz for MILCOM and land mobile applications;
  • a W-band power amplifier monolithic microwave integrated circuit (MMIC) covering 80-100GHz with what is claimed to be leading gain and power performance; and
  • high-reliability and component products for mission-critical space and aerospace applications.

Also, MACOM experts are participating in various sessions throughout IMS, including:

  • 'Use of Nonlinear Vector Network Analyzer Measurements in the Development of GaN on Silicon for BTS Applications' (WME-4) in session 'Large Signal Network Analysis: From Instrumentation Architectures to Software Applications for Your RF Design Flow Improvement' on 23 May (8am–5pm PT);
  • 'Transceivers for Highly Spectral Efficient Multi-Gbps radio links' (WMH-2) in session 'E-Band Communications: Market, Technology and IC Design' on 23 May (9am PT).

Technical Session

  • 'Soldered Hot-via E-band and W-Band Power Amplifier MMICs for Millimeter-wave Chip Scale Packaging' in session WE1B-3, on 25 May (8:40–9 PT) in Room 304. 


  • 'GaN on Silicon Power Amplifier Bias and Decoupling Techniques' on 25 May (2:30pm PT) on Microapps pavilion show floor; and
  • 'GaN on Si Thermal Behavior and Its Impact on PA Performance, Reliability and Cost' on 26 May (10:35 PT) on Microapps pavilion show floor. 

Tags: M/A-COM

Visit: www.ims2016.org

Visit: www.macomtech.com

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