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IQE

23 May 2016

IDT launches Si-based 50-8000MHz 50Ω SPDT RF switches, drop-in compatible with GaAs

Integrated Device Technology Inc (IDT) of San Jose, CA, USA has launched two high-isolation, low-loss, high-linearity broadband RF switches for a wide variety of applications. Operating at 50-8000MHz, the F2932 and F2933 are silicon-based, low-distortion 50Ω absorptive single-pole, double-throw (SPDT) switches. With industry-standard 4mm x 4mm 16-pin QFN packages and drop-in compatible footprints and control, their combination of specs make the devices suitable for communications and public safety systems, radar and general purpose switching.

At 4GHz the F2932 and F2933 deliver: high isolation of 66dB; low distortion of 64dBm IIP3 (third-order intercept point) @ 15dBm tones, 1MHz channel spacing; insertion loss of 0.93dB; and P1dB (output power at 1dB gain compression point) of >35dBm.

IDT claims that the inherent benefits over most competitive products - particularly compared to typical gallium arsenide (GaAs)-based switches - are: better RF performance; greater reliability; easier integration; and lower total solution cost.

"These two new devices offer one of the industry's highest isolation values and, when combined with their low distortion and low insertion loss, they provide superior performance for many different high-isolation applications," says Chris Stephens, general manager of IDT's RF division. 

The F2932 and F2933 offer similar RF performance, pin-out and control, but the F2932 has an additional enable/disable feature, allowing all RF paths to be put into an off-state and disabling the VCTL feature.

Tags: RF switches

Visit: www.IDT.com

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