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18 May 2016

Ampleon launches second generation of 50V, 0.5μm GaN-on-SiC RF power transistors

Ampleon Netherlands B.V. of Nijmegen, The Netherlands (formerly NXP Semiconductors N.V.'s RF Power business, acquired by China's Jianguang Asset Management Co Ltd last December) has launched its second generation of 50V, 0.5μm gallium nitride on silicon carbide (GaN-on-SiC) RF power transistors, dedicated for mobile broadband applications.

Providing a 5% improvement in power efficiency compared with LDMOS-based silicon devices, and enabling high-power multi-band applications, the new GaN family also offers a size reduction of 30-50% compared with similar LDMOS transistors. Designers of power amplifiers (PAs) can now more easily find a suitable fit for each particular set of requirements (efficiency, size, power and cost) while getting the full benefit of Ampleon's experience in PA and transistor design, and manufacturing, says the firm.

The new portfolio will include transistors with 15-600W of peak power for all major cellular bands between 1.8GHz and 3.8GHz.

The CLF2H27LS-140 is a single-ended transistor providing 140W of peak power in band 41. Other devices currently sampling include the CLF2H1822LS-160 and CLF2H1822LS-220 suitable for 1.8-2.2GHz multi-band applications, and the CLF2H38LS-140 and CLF2H38LS-40 (driver) for 3.4-3.8GHz applications with 140W and 40W outputs at P3dB.

The family is suitable for RF PA designers developing high-efficiency or multi-band Doherty power amplifiers for use in wireless infrastructure networks.

Ampleon also provides comprehensive application support, including ready-to-go Doherty reference designs optimized for mass-production.

See related items:

Ampleon expands GaN RF power transistor range with 10-200W rated devices

NXP's RF Power business becomes Ampleon under new owner JAC Capital

Tags: NXP

Visit: www.ampleon.com

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