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11 July 2016

Fairview launches portfolio of GaN solid-state power amplifiers offering high power and gain across up to 7.5GHz

Fairview Microwave Inc of Allen, TX, USA, which supplies on-demand microwave and RF components, has launched a new line of gallium nitride (GaN) solid-state amplifiers, offering designers what is claimed to be a unique solution of off-the-shelf, in-stock components that typically require months of lead time to acquire.

The rugged connectorized amplifier designs have high output load impedance, offering easier impedance matching over wider bandwidths using lower-loss components. The high thermal conductivity of GaN helps to dissipate heat more effectively, resulting in amplifier designs with much higher output power levels over broadband and narrowband frequencies. Common applications include commercial and military radar, jamming systems, medical imaging, communications, and electronic warfare.

Fairview's newest range of GaN RF amplifiers includes models with very high gain levels from 43dB to 60dB across mostly broad frequency bands ranging from 30MHz to 7.5GHz. Saturated output power levels range from 10W to 100W with up to 35% power-added efficiency (PAE). All of the high-power GaN amplifiers have single voltage supplies that are internally regulated. The 50 ohm input/output-matched designs are adaptable to a range of power and modulation requirements. The GaN solid-state power amplifiers also show harmonic response of -15dBc to -20dBc, under worst-case conditions. The new GaN amplifiers are designed to withstand environmental conditions such as humidity, altitude, shock and vibration. Some models are also equipped with integrated heat-sinks and cooling fans. Most designs are EAR99.

Tags: GaN HEMT Solid-state power amplifiers

Visit: www.fairviewmicrowave.com/rf-products/gan-power-amplifiers.html

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