15 January 2016

EPC launches development boards for 200V eGaN FETs operating up to 30MHz

Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has launched high-efficiency GaN-based differential mode development boards that can operate at up to 30MHz, providing an easy-to-use way for power systems designers to evaluate the performance of GaN transistors and get their products into volume production quickly, says the firm.

The development boards are designed for class-E applications, such as wireless charging, but can be used for any application where a low-side switch is utilized. Examples include, but are not limited to, push-pull converters, current-mode class-D amplifiers, common source bi-directional switch, and generic high-voltage narrow-pulse-width applications such as LiDAR.

The development boards feature 200V-rated eGaN FETs. The amplifiers are set to operate in differential mode and can be re-configured to operate in single-ended mode and include the gate driver and logic supply regulator.

All three boards (the EPC9052 for EPC2012C eGaN FETs, the EPC9053 for EPC2019 eGaN FETs, and the EPC9054 for EPC2010C eGaN FETs) have common preference specifications. The operating load conditions (including configuration) determine the optimal design load voltage and resistance.

The EPC9052/9053/9054 are priced at $158.13 each and are available from Digi-Key. Quick Start Guides (containing set-up procedures, circuit diagram, performance curves, bill of material and Gerber files for the boards) are provided on-line.

Tags: EPC E-mode GaN FETs GaN-on-Si

Visit: http://digikey.com/Suppliers/us/Efficient-Power-Conversion.page

Visit: http://epc-co.com/epc/Products/DemoBoards.aspx