Temescal

Semigas

CLICK HERE: free registration for Semiconductor Today and Semiconductor Today ASIACLICK HERE: free registration for Semiconductor Today and Semiconductor Today ASIA

Join our LinkedIn group!

Follow ST on Twitter

IQE

16 February 2016

Veeco collaborating with imec to improve GaN-based power device yield and reliability

Epitaxial deposition and process equipment maker Veeco Instruments Inc of Plainview, NY, USA has signed a joint development project (JDP) agreement with Belgium-based nano-electronics research center imec. The collaboration is expected to accelerate the development of highly efficient gallium nitride (GaN)-based power electronic devices using epitaxial wafers created using Veeco's Propel Power GaN metal-organic chemical vapor deposition (MOCVD) system.

Featuring a single-wafer 200mm reactor platform capable of processing 6- and 8-inch wafers and designed specifically for the power electronics industry, the Propel Power GaN MOCVD system (launched in November 2014) deposits GaN films for the production of highly efficient power electronic devices. The single-wafer reactor is based on Veeco's TurboDisc MOCVD design and includes the new IsoFlange and SymmHeat technologies that provide homogeneous laminar flow and a uniform temperature profile across the entire wafer. Users can easily transfer processes from Veeco's K465i and MaxBright MOCVD systems to the Propel Power GaN platform.

Imec has already demonstrated significant gains in GaN layer uniformity and run-to-run repeatability with the Propel system, resulting in significantly improved power device yields. The single-wafer reactor incorporates Veeco's proprietary TurboDisc technology, which is said to deliver superior film uniformity, run-to-run control and defect levels compared to batch reactors.

"Within the framework of our industrial affiliation program on GaN-on-Si, Veeco and imec have collaborated over the last four years to improve the epi quality of GaN layers deposited on silicon wafer substrates," says Rudi Cartuyvels, senior VP Smart Systems and Energy Technologies at imec. "The ultimate goal is to produce the next generation of highly efficient power switching devices," he adds. "We have set very high GaN device yield and reliability targets for 2016, and we look forward to partnering with Veeco to achieve these targets."

According to market research by IHS, industry requirements are growing and requiring smaller, more energy-efficient power ICs. This, in turn, is driving the need for improved power devices using advanced materials. GaN-on-Si coupled with improved process solutions, such as single-wafer GaN MOCVD, is critical to the development of these improved power devices.

"Global demand for advanced power electronics with greater energy efficiency, a smaller form factor and greater reliability is rapidly accelerating," notes Jim Jenson, senior VP & general manager, Veeco MOCVD Operations. "We believe that the technology in our Propel single-wafer system will enable imec to achieve their power device targets and help to bring these advanced devices to market faster."

See related items:

Veeco launches MOCVD platform for development of GaN power electronic devices

Tags: Veeco MOCVD GaN-on-Si IMEC

Visit: www.veeco.com/Propel

Visit: www.imec.be

Share/Save/Bookmark
See Latest IssueRSS Feed

AXT