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IQE

22 May 2015

Qorvo launches high-power plastic-packaged GaN MMIC PAs for S-band radar

Qorvo Inc of Greensboro, NC and Hillsboro, OR, USA, a provider of RF solutions for mobile, infrastructure and aerospace/defense applications, has launched high-power gallium nitride (GaN) monolithic microwave integrated circuit (MMIC) power amplifiers in plastic packages, designed to improve the size, weight and power performance in commercial and military S-band radar applications.

"Qorvo is leveraging our deep expertise in GaN technology and packaging to deliver the industry's highest-performing GaN products in plastic packages," claims James Klein, Qorvo's president of Infrastructure and Defense Products. "We are committed to the long-term development of processes and technologies that drive down the cost of GaN, and improve the size, weight and power which provides optimum system performance at a competitive price point."

The 2.8-3.7GHz TGA2818-SM, the 2.9-3.5GHz TGA2817-SM, the 3.1-3.5GHz TGA2814-SM and the 3.1-3.6GHz TGA2813-SM provide what is claimed to be unparalleled output power (30, 60, 80 and 100W, respectively) and power-added efficiency (PAE of 47%, 54%, 55% and 56%, respectively) in a low-cost, space-saving surface-mount plastic QFN package (6mm x 6mm for the TGA2818-SM, 7mm x 7mm for the TGA2817-SM and TGA2814-SM, and 7mm x 9mm for the TGA2813-SM). Samples of the plastic-packaged GaN MMICs are available now.

Qorvo showcased its portfolio of GaN products at the 2015 IEEE MTT-S International Microwave Symposium (IMS) in Phoenix, Arizona (18-21 May).

Tags: Qorvo

Visit: www.qorvo.com

Visit: www.ims2015.org

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