22 May 2015

Qorvo launches input-matched plastic-packaged GaN-on-SiC HEMTs for radar and communications systems

Qorvo Inc of Greensboro, NC and Hillsboro, OR, USA, a provider of RF solutions for mobile, infrastructure and aerospace/defense applications, has launched a family of input-matched gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistors (HEMTs) in a low-cost plastic package (sampling now) designed to enable cost-effective commercial and military radar and radio communications systems.

"Input-matched GaN transistors have become very popular because they can be optimized for power and efficiency within the band, enabling RF systems to have greater flexibility and simplified board design," says James Klein, Qorvo's president of Infrastructure and Defense Products. "By expanding the portfolio of GaN transistors to include low-cost plastic packaging, Qorvo is providing customers with cost-effective, scalable GaN solutions that are also very power efficient."

The 5W TGF2965-SM (operating at 0.03-3GHz), 5W TGF3020-SM (4-6GHz) and 10W TGF3015-SM (0.03-3GHz) input-matched transistors enable high linear gain and power efficiency in a low-cost, space-saving surface-mount 3mm x 3mm plastic QFN package. The integrated input matching network enables wideband gain and power performance. The output can be matched on the board to optimize power and efficiency for any region within the band.

The 30W TGF3021-SM (0.03-4GHz) also has the features of low-cost, space-saving plastic packaging (3mm x 4mm) as well as providing continuous-wave capabilities for military communications applications.

Qorvo showcased its portfolio of GaN products at the 2015 IEEE International Microwave Symposium (IMS) in Phoenix, Arizona (18-21 May).

Tags: Qorvo

Visit: www.qorvo.com

Visit: www.ims2015.org