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14 May 2015

GeneSiC offers all-SiC junction transistor-rectifier co-packaged in 4-leaded mini-module

Silicon carbide (SiC) power semiconductor supplier GeneSiC Semiconductor Inc of Dulles, VA, USA has announced the availability of the GA50SICP12-227 20mΩ/1200V SiC junction transistor-diode in an isolated SOT-227 4-leaded mini-module package that enables extremely low turn-on energy losses while offering flexible, modular designs in high-frequency power converters.

The use of high-frequency, high-voltage and low on-resistance capable SiC transistors and rectifiers will reduce the size/weight/volume of electronics applications requiring higher power handling at high operating frequencies, says the firm. The new devices are targeted at a wide variety of applications including induction heaters, plasma generators, fast chargers, DC-DC converters, and switched-mode power supplies (SMPS).

GeneSiC's 1200V/20mΩ SiC junction transistor-rectifier co-packaged in an isolated SOT-227 package providing separate gate source and sink capability. Picture: GeneSiC's 1200V/20mΩ SiC junction transistor-rectifier co-packaged in an isolated SOT-227 package providing separate gate source and sink capability.

GeneSiC says that its co-packaged SiC junction transistor (SJT)-SiC rectifiers are uniquely applicable to inductive switching applications because SJTs are the only wide-bandgap switch that offers >10μs repetitive short-circuit capability, even at 80% of the rated voltages (e.g. 960V for a 1200V device). In addition to the sub-10ns rise/falls times and a square reverse-biased safe operation area (RBSOA), the gate return terminal in the new configuration significantly improves the ability to reduce the switching energies, says GeneSiC. The new class of products offers transient energy losses and switching times that are independent of junction temperature. GeneSiC adds that its SiC junction transistors are gate-oxide free, normally-off, exhibit positive temperature co-efficient of on-resistance, and are capable of being driven at low gate voltages (unlike other SiC switches).

The SiC Schottky rectifiers used in the mini-modules show low on-state voltage drops, good surge current ratings and the industry's lowest leakage currents at elevated temperatures, claims GeneSiC. With temperature-independent, near-zero reverse recovery switching characteristics, SiC Schottky rectifiers are suitable candidates for use in high-efficiency circuits, the firm adds.

"GeneSiC's SiC transistor and rectifier products are designed and manufactured to realize low on-state and switching losses," says president Dr Ranbir Singh. "A combination of these technologies in an innovative package promises exemplar performance in power circuits demanding wide-bandgap-based devices," he adds. "The mini-module packaging offers great design flexibility for use in a variety of power circuits like H-bridge, flyback and multi-level inverters."

All devices are 100% tested to full voltage/current ratings. The devices are available from GeneSiC's authorized distributors.

Tags: GeneSiC SiC Schottky diode SiC

Visit: www.genesicsemi.com/commercial-sic/sic-modules-copack

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