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1 May 2015

GaN Systems launching high-power 650V gallium nitride power transistor at PCIM

In hall 9, stand 600 at PCIM (Power Conversion Intelligent Motion) Europe 2015 in Nuremberg,
Germany (19-21 May), GaN Systems Inc of Ottawa, Ontario, Canada, a fabless producer of gallium nitride (GaN)-based power switching transistors based on its proprietary Island Technology for power conversion and control applications, is launching a new addition to its range of high-power GaN transistors.

The GS66516T 650V enhancement-mode device expands GaN Systems' range of power switching semiconductors, which is already claimed to be the broadest product offering on the market (with current ratings ranging from 8A to 250A). The new device features the firm's new proprietary topside cooling technology (announced in March), which allows the device to be cooled using familiar and conventional heat-sink or fan cooling techniques. The full specification of the new GaN Systems power switching transistor will be announced at the show. 

GaN Systems says that, as gallium nitride moves from being an innovative technology to mainstream production, it will be exhibiting applications that harness the power of GaN power transistors. Products to be shown include: a vehicle power inverter from leading US technology firm DRS Technologies, a 2kWh tactical power pack from Virideon, and a 5kW 3-phase inverter power module from LS Industrial Systems of Korea.

Also, at the PCIM conference, president Girvan Patterson is talking about the market opportunities for GaN in the special session 'Power GaN for Automotive Applications' (chaired by editor Achim Scharf). He is also delivering a paper on 'Large Area Embedded GaN Power Transistors' co-authored by chief technical officer John Roberts and thermal analyst Lyubov Yushyna.

See related items:

GaN Systems' power semiconductors gain top-side cooling for simpler PCB design

Tags: GaN Systems Power electronics

Visit: www.mesago.de/en/PCIM/main.htm

Visit: www.gansystems.com

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