17 March 2015

Transphorm launches first 600V GaN transistor in TO-247 package

At the 30th IEEE Applied Power Electronics Conference and Exposition (APEC 2015) in Charlotte, NC, USA (15-19 March), Transphorm Inc of Goleta, near Santa Barbara, CA, USA (which designs and provides gallium nitride-based power conversion devices and modules) has announced that it is offering engineering samples of its TPH3205WS transistor, the first 600V gallium nitride (GaN) transistor in a TO-247 package, it is claimed.

Offering 63mΩ R(on) and 34A ratings, the device uses the firm's Quiet Tab source-tab connection design, which reduces electromagnetic interference (EMI) at high dv/dt to enable low switching loss and high-speed operation in power supply and inverter applications. The new device extends Transphorm's EZ-GaN product portfolio to now support photovoltaic (PV) inverter designs with power levels ranging from a few 100W (micro-inverters) to several kW (residential central inverters).

Picture: Transphorm's TPH3205WS transistor.

In booth 1317, Transphorm is demonstrating how its new TPH3205WS results in ultra-high-efficiency power conversion circuits. One live demo features a 2.4kW bridgeless totem-pole PFC exhibiting near-99% PFC efficiency at 100kHz operation. When combined with a GaN-based dc-dc conversion stage, the totem-pole PFC enables a greatly simplified 80 PLUS titanium power supply design providing power densities that are unachievable with silicon-based designs, it is claimed. Another live demo is showcasing the TPH3205WS's dynamic R(on) performance. Transphorm claims that in 2009 it was the first firm to overcome and demonstrate reliable and stable on-resistance across the full range of switching voltages from DC to 400V. The latest device continues this, with an R(on) increase under switching of only 5% at 400V, compared with other competitively rated devices with an almost 90% increase, it is reckoned. Transphorm is also displaying a static demo of the TPH3205WS used in a 3kW inverter showing test results at 100kHz and a peak efficiency of 98.8% (and over 99% at 50kHz).

Transphorm says that, over the last several years, GaN has emerged as a leading technology enabler for the next wave of compact, energy-efficient power conversion systems – ranging from ultra-small adapters, high-power-density PCs, server and telecom power supplies, to highly efficient PV inverters and motion control systems. "Transphorm's increased market footprint with this new higher-current GaN product - along with its access to high-quality, high-scale foundry manufacturing - enables us to meet growing demand from global customers," says president & co-founder Primit Parikh.

Engineering samples of the TPH3205WS are available now from stock. Production release is scheduled for the end of June.

See related items:

Transphorm and ON Semiconductor launch co-branded GaN power devices

Fujitsu begins mass production of Transphorm's GaN power devices

Tags: Transphorm GaN-on-Si GaN HEMT

Visit: www.transphormusa.com