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12 March 2015

EPC to demo 500W high-power-density GaN-based eighth brick DC-DC converter

In booth #1405 at the 30th annual IEEE Applied Power Electronics Conference & Exposition (APEC 2015) in Charlotte, North Carolina (15-19 March), Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, is exhibiting its latest eGaN products and demonstration boards. These include an A4WP-compliant 6.78MHz wireless power amplifier demonstration, a 500W high-power-density eighth brick DC-DC converter, and monolithic integrated GaN half-bridge devices. EPC is also introducing what is claimed to be an industry-first handbook for wireless power amplifier design (the latest addition to the EPC library of GaN technology textbooks).

In addition, at the APEC 2015 conference, EPC's GaN applications experts are giving the following eight technical presentations: 

17 March

  • 8.30–11.55am (IS01; Latest Advances in Power Semiconductors, a Less Biased Discussion) - 'Low Voltage GaN – Discussion of Initial Application Adoption and State of Reliability Achievement' by Alex Lidow;
  • 17–18.30 (Rap Session #1) - 'Wireless Transfer of Power: Facts and Fictions' by Michael de Rooij;
  • 17–18.30 (Rap Session #2) - 'Wide Bandgap Semiconductor Devices in Power Electronics – Who, What, Where, When, Why' by Alex Lidow.

18 March

  • 10.30–11am (Exhibitor Seminar #5, Room 217A) - 'GaN Transistors for Efficient Power Conversion' by Alex Lidow;
  • 2–5.30pm (1283; Semiconductor Devices, Track: Devices and Components) - 'Effectively Paralleling Gallium Nitride Transistors for High Current and High Frequency Applications' by David Reusch.

19 March

  • 8.30–11.30am (1123; Semiconductor Devices, Track: Devices and Components) - 'Enhancement Mode Gallium Nitride Transistor Reliability' by Alex Lidow;
  • 11.30–2pm (1293; Wide Band Gap Devices) - 'A New Family of GaN Transistors for Highly Efficient High Frequency DC-DC Converters' by David Reusch;
  • 2–5.30pm (1034; Semiconductor Devices, Track: Devices and Components) - 'The ZVS Voltage Mode Class-D Amplifier, an eGaN FET-Enabled Topology for Highly Resonant Wireless Energy Transfer' by Michael de Rooij.

Tags: EPC E-mode GaN FETs

Visit: www.apec-conf.org

Visit: www.epc-co.com

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