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22 April 2015

ON Semiconductor to demonstrate GaN HEMT-based two-stage converter at PCIM

At PCIM (Power Conversion Intelligent Motion) Europe 2015 in Nuremberg, Germany (19-21 May), ON Semiconductor of Phoenix, AZ, USA (which supplies silicon-based power and signal management, logic, discrete and custom devices for energy-efficient electronics) will be showcasing its latest advances in power management technology, including developments involving gallium nitride (GaN). Featured demonstrations include:

A two-stage converter demonstrating the latest high-efficiency results obtainable with GaN high-electron-mobility transistors (HEMTs). The 240W supply achieves 95% peak efficiency using the NCP1397 LLC controller, NCP1654 power factor correction (PFC) controller, and TPH3202PS or NTP8G202N GaN transistor switching devices. The board uses GaN HEMTs in both the PFC stage and in the primary side of the LLC stage.

Also, at the Exhibitor Forum in Hall 7, booth 260 on 21 May (14:00) presenters Chris Rexer and Jason McDonald will talk about 'Advanced Silicon and GaN Power Technologies from ON Semiconductor for next generation applications in the Medium to High Voltage Range'.

In addition, in the Poster Dialogue Sessions at the Foyer Ground Floor Entrance NCC Mitte on19 May (15:30–17:00), ON Semiconductor technical experts will be giving the following presentations:

  • 'Development of 650V Cascode GaN Technology' by Charlie Liu;
  •  '1 kW LLC Resonant Converter with HV GaN Switches' by Adam Vasicek.

See related items:

ON Semiconductor and Transphorm to co-develop and co-market GaN-based power systems

Tags: GaN-on-Si GaN HEMT

Visit: www.onsemi.com

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