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15 April 2015

NI AWR application note demos Design Environment load-pull simulation for designing wideband high-efficiency PAs

NI AWR Corp of El Segundo, CA, USA has announced an application note 'Using NI AWR Design Environment Load-Pull Simulation for the Designer of Wideband High-Efficiency PAs' that explores the design of power amplifiers (PAs) leveraging load-pull technology within NI AWR Design Environment software, specifically that of Microwave Office.

Using a Cree CGH40010F gallium nitride (GaN) high-electron-mobility transistor (HEMT) in a Class F PA at 2000MHz as the example circuit, the application note details how power-added efficiency (PAE) is maximized by optimizing source and load pull at the fundamental frequency, plus second and third harmonics.

Additionally, the ability of the load-pull technique to inspect transistor voltage and current waveforms helps users to gain confidence in their high-performance designs, says the firm.

Tags: AWR EDA

Visit: www.awrcorp.com/solutions/technical-papers

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