- News
9 September 2014
Custom MMIC launches 28-32GHz GaN power amplifier for Ka-band communications
Custom MMIC of Westford, MA, USA, a developer of performance-driven monolithic microwave integrated circuits (MMICs), has added to its growing product line with the CMD217, a 28-32GHz gallium nitride (GaN) power amplifier in die form, suitable for applications including Ka-band communication systems where high power and high linearity are required.
The CMD217 features more than 20dB of gain across its operating frequency range, with a corresponding P1dB (output power at 1dB compression point) of +36.7dBm and saturated output power of +39.3dBm (8.5W). Power-added efficiency (PAE) is 28-35% across the band.
The CMD217 is a fully matched 50 ohm design and only requires external bypass capacitors to complete the bias circuitry. The die is passivated for increased reliability and moisture protection.
Custom MMIC launches 14-18GHz GaN PA for Ku-band communications
Custom MMIC MMIC GaN power amplifiers
©2006-2020
Juno Publishing and Media Solutions Ltd. All rights reserved. Semiconductor
Today and the editorial material contained within it and related media is
the copyright of Juno Publishing and Media Solutions Ltd. Reproduction in
whole or part without permission from Juno Publishing and Media Solutions
Ltd is forbidden. In most cases, permission will be granted, if the magazine
and publisher are acknowledged.