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9 September 2014

Custom MMIC launches 28-32GHz GaN power amplifier for Ka-band communications

Custom MMIC of Westford, MA, USA, a developer of performance-driven monolithic microwave integrated circuits (MMICs), has added to its growing product line with the CMD217, a 28-32GHz gallium nitride (GaN) power amplifier in die form, suitable for applications including Ka-band communication systems where high power and high linearity are required.

The CMD217 features more than 20dB of gain across its operating frequency range, with a corresponding P1dB (output power at 1dB compression point) of +36.7dBm and saturated output power of +39.3dBm (8.5W). Power-added efficiency (PAE) is 28-35% across the band.

The CMD217 is a fully matched 50 ohm design and only requires external bypass capacitors to complete the bias circuitry. The die is passivated for increased reliability and moisture protection.

See related items:

Custom MMIC launches 14-18GHz GaN PA for Ku-band communications

Tags: Custom MMIC MMIC GaN power amplifiers

Visit: www.CustomMMIC.com

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