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7 October 2014

Sandia National Laboratories orders Matheson/Taiyo Nippon Sanso commercial grade GaN MOCVD system

Matheson of Basking Ridge, NJ, USA, a subsidiary of Taiyo Nippon Sanso Corporation (TNSC), says that it has been selected by Sandia National Laboratories to provide a commercial grade gallium nitride (GaN) metal organic chemical vapor deposition (MOCVD) system for its compound semiconductor device development work with aluminum gallium nitride (AlGaN) and aluminum nitride (AlN).  The fully integrated SR-4000HT tool is scheduled for delivery in Q1/2015.  TNSC will build the tool at its production facilities in Japan, and Matheson will be the U.S. provider of the system to Sandia.

"We evaluated several different supplier systems and platforms for our needs through our rigorous competitive bidding process and, in the end, we found that the SR-4000HT best met our technical specifications. Its capability to grow atmospheric AlGaN layers with a high growth rate will improve the efficiency of our device development efforts, as well as, we believe, produce higher quality materials," said Jeffrey Fiegel, a member of the Sandia technical staff who participated in the selection process.

"We are delighted that Sandia chose our system. The unique design of the SR-4000HT is largely based on Sandia's research in early 2000 and the joint research between TNSC and Kyoto University in the late '90s.  Growing high aluminum content devices at high growth rates, while operating at higher than 40 kPa pressures and elevated temperatures will afford Sandia shorter fabrication turnaround times, better electrical properties, and unmatched reproducibility," stated Koh Matsumoto, executive corporate officer at TNSC.

Tags: Matheson Taiyo Nippon Sanso MOCVD GaN

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