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21 May 2014

Microsemi launches 1200V SiC MOSFETs for high-voltage industrial applications

Microsemi Corp of Aliso Viejo, CA, USA (which designs and makes analog and RF devices, mixed-signal integrated circuits and subsystems) has introduced its new silicon carbide (SiC) MOSFET product family with new 1200V solutions. The new SiC MOSFETs are designed for high-power industrial applications where efficiency is critical, including solutions for solar inverters, electric vehicles, welding and medical devices.

Microsemi reckons that it is well positioned to capitalize on SiC semiconductor market growth. Yole Développement estimates that the SiC power semiconductor market will grow 39% year-on-year from 2015 to 2020, and market research estimates the SiC semiconductor market will grow 38% year-on-year to $5.3bn by 2022.


Designed to help users to develop solutions that operate at higher frequency and improve system efficiency, the new SiC MOSFETs provide patented technology features including:

  • what is claimed to be best-in-class RDS(on) versus temperature;
  • ultra-low gate resistance for minimizing switching energy loss;
  • superior maximum switching frequency; and
  • ruggedness with superior short-circuit withstand.

“Microsemi continues to expand its SiC product portfolio by capitalizing on our in-house SiC fabrication capabilities and delivering innovative high-power solutions,” says Marc Vandenberg, general manager of the firm’s Power Products Group.

The 1200V SiC MOSFETs are rated at 80mΩ and 50mΩ and provide more development flexibility by offering both industry-standard TO-247 and SOT-227 packages:

  • APT40SM120B – 80mΩ, 40A, TO-247 package;
  • APT40SM120J – 80mΩ, 40A, SOT-227 package;
  • APT50SM120B – 50mΩ, 50A, TO-247 package; and
  • APT50SM120J – 50mΩ, 50A, SOT-227 package.

New SiC MOSFET power modules

SiC MOSFETs are also integrated into the firm’s expanded MOSFET power modules, which are used in battery charging, aerospace, solar, welding and other high-power industrial applications. The new power modules provide higher-frequency operation and improve system efficiency.

New 1700V Schottky diodes

The SiC MOSFETs are also complemented by Microsemi’s complete product line of SiC Schottky diodes. The new 1700V SiC Schottky diode expands the line beyond the existing 1200V and 650V options. These products are designed with what is claimed to be superior passivation technology for ruggedness in outdoor and humid applications.

The new 1200V SiC MOSFETs are available now in TO-247 packages and in July in SOT-227 packages. SiC MOSFET power modules and the 1700V Schottky diode are available now.

Microsemi’s SiC solutions, power products, sensor devices, ultra-low power radios and system-on-chip (SoC) FPGA-based motor control solutions were displayed at the PCIM (Power Conversion Intelligent Motion) Europe 2014 event in Nuremberg, Germany (20–22 May).

Tags: Microsemi SiC MOSFET SiC Schottky barrier diodes

Visit: www.microsemi.com/sicmosfets

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