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13 May 2014

GaN Systems presenting lateral transistors for HEVs; launching high-current devices

GaN Systems Inc of Ottawa, Ontario, Canada, a fabless developer of gallium nitride (GaN)-based power switching semiconductors for power conversion and control applications, is exhibiting in booth 9-523 at PCIM (Power Conversion Intelligent Motion) Europe 2014 in Nuremberg, Germany (20–22 May).

PCIM focuses on power electronics and its applications in intelligent motion, renewable energy and energy management, and GaN Systems has selected the event to reveal its latest developments and make two announcements on its gallium nitride power semiconductors.

At the PCIM conference, Larry Spaziani is presenting the paper ‘Lateral GaN Transistors – A Replacement for IGBT devices in Automotive Applications’ (written by chief technical officer John Roberts) explaining the performance improvements that GaN devices achieve in drive train power requirements for hybrid and electric vehicles (HEVs). Worldwide, several groups of researchers are undertaking work on replacing silicon insulated-gate bipolar transistors (IGBTs) in these applications.  Spaziani is presenting results achieved by GaN Systems’ devices, which are based on the firm’s unique Island Technology intellectual property (IP). The presentation will include a comparison between the company’s products and competing offerings.

Also at PCIM, GaN Systems is making two major announcements: the forthcoming commercial availability of its GaN high-current devices and 100V process qualification.

Tags: GaN Systems Power electronics

Visit: www.gansystems.com

Visit: www.mesago.de/en/PCIM/main.htm

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