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20 May 2014

GaN Systems launches normally-off 100V GaN transistors in optimized low-inductance and thermally efficient packaging

GaN Systems Inc of Ottawa, Ontario, Canada, a fabless developer of gallium nitride (GaN)-based power switching semiconductors for power conversion and control applications, has launched a family of normally-off 100V GaN transistors that spans 20-80A with very low on-resistance. GS61002P, GS61004P, GS61006P and GS61008P are, respectively, 20A/21mΩ, 40A/11mΩ, 60A/8mΩ and 80A/5mΩ parts, while GS71008P is an 80A/5mΩ half-bridge device.

The new enhancement-mode parts feature a reverse current capability, source-sense for optimal high-speed design and low total gate charge (QG) and reverse recovery charge (QRR). RoHS compliant, the devices are delivered in GaN Systems’ near-chipscale, embedded GaNPX package, which minimizes inductance and optimizes thermal performance.

“We believe we are the first company to have such a wide range of parts available for are sampling now,” says president Girvan Patterson. Applications include high-speed DC-DC converters, low-voltage AC motor drives, inverters and switched mode power supplies.

Tags: GaN Systems

Visit: www.gansystems.com

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