- News
13 March 2014
EPC to demonstrate how eGaN FETs boost efficiency by 20% in wireless power applications
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, will be giving technical presentations at three power electronics conferences in Asia.
At two conferences in Shanghai, China on 18 March, EPC will present how GaN power devices have emerged as higher-efficiency replacements for aging silicon (Si) power MOSFETs, specifically due to increases in performance offered by eGaN FETs in wireless power transfer (WiPo) applications. Examples include a new power conversion design that delivers up to 20% improvement in efficiency and a second design delivering power of up to 30W operating with loosely coupled coils in the 6.78MHz ISM (industrial, scientific & medical) band.
On 18 March at Electronica China 2014, ‘Improving Wireless Energy Transfer Performance with eGaN FET-based Converter’ will be presented by Dr Michael de Rooij (executive director of Application Engineering) and Peter Cheng (director of FAE for Asia).
On 18 March at the IIC-China 2014 Spring Conference (Power Management and Semiconductor), ‘Improving Wireless Energy Transfer Performance with eGaN FET-based Converter’ will be presented by Dr Michael de Rooij (executive director of Application Engineering) and Peter Cheng (director of FAE for Asia).
On 10 April, at the International Workshop on Wide-Band-Gap Power Electronics (IWWPE 2014) at ITRI, Taiwan, ‘Crushing Silicon with GaN’ will be presented by EPC’s CEO & co-founder Dr Alex Lidow, who will highlight key new applications, latest products on the market, latest roadmaps into the future, and the relative competitive position of GaN with the power MOSFET and silicon carbide (SiC).
“These three key Asian industry conferences provide EPC an opportunity to meet with practicing power system design engineers and share the attributes of GaN technology and how eGaN FETs can increase performance and efficiencies in their power system designs,” says Lidow.
www.fair.iic-china.com/iicc/CONVISTR/2014spring-power.HTM
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