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27 June 2014

EPC’s eGaN power transistors receive EDN China Innovation Award for Leading Technology

At a ceremony in Shanghai, Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has been recognized with an EDN China 10th Anniversary Innovation Award for Leading Technology in the category ‘Most Influential Technology for the Future’.

The EDN China Innovation Award recognizes technology, product and company innovation. The winners were selected through online voting of electronics design engineers and managers worldwide (40%), expert judging (30%) and editor evaluation (30%).

“Power designers appreciate the fast switching speed, high efficiency, small size, and competitive cost of the enhancement-mode GaN transistor – attributes that will lead to continued displacement of the silicon MOSFET,” says EPC’s CEO Alex Lidow.

The EDN China Innovation Award 2014 received 128 product nominations in nine major categories from over 70 companies worldwide.

Tags: EPC E-mode GaN FETs

Visit: www.ednchina.com

Visit: www.epc-co.com

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