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20 January 2014

Marktech launches InGaAs/InP-based 800-1750nm PIN photodiodes

Marktech Optoelectronics of Latham, NY, USA, whose capabilities span wafer growth through finished packaging and custom solutions, has launched its line of PIN photodiode components based on InGaAs/InP (indium gallium arsenide/indium phosphide) technology. The devices are available (via Digi-Key) in a TO-46 flat top package with a spectral sensitivity in the 800-1750nm range. Custom package options and die are also available.

Photodiode chip active area sizes from 0.1mm to 3.0mm are available to provide the optimum balance between low dark current, high speed and light sensitivity. This allows for increased flexibility and options in a variety of applications ranging from fiber optics and high-speed optical communications to medical and chemical analysis, says Marktech.

No integrated thermal-electric cooling (TEC) is used on any of the firm’s PIN photodiodes, reducing costs and improving overall efficiency.

In addition to PIN photodiodes, Marktech offers foundry services for epitaxial growth of short-wave infrared (SWIR) wafers in the 1.0-2.6┬Ám range, using InP material as the base substrate. Marktech is currently producing these high-reliability wafers in 2”, 3” and 4” diameters. Among the applications for these wafers are photodetectors, linear arrays and image sensors. Marktech says that photodetectors processed using the epiwafers provide advantages including lower dark current, better shunt resistance and overall improved performance at lower operating temperatures.

Marktech is exhibiting in booth 5143 at Photonics West 2014 in San Francisco (4-6 February).

Tags: Marktech Optoelectronics PIN photodiode

Visit: www.marktechopto.com

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