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27 February 2014

EPC presenting GaN technology for high-frequency resonant and envelope tracking power supplies at APEC

At 29th annual IEEE Applied Power Electronics Conference & Exposition (APEC 2014) in Fort Worth, TX, USA (16-20 March), Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, will give three application-focused technical presentations about high-frequency resonant converter, and high-frequency, hard-switched power converter design.

Technical presentations featuring GaN FETs by EPC experts are as follows:

  • ‘Evaluation of Gallium Nitride Transistors in High Frequency Resonant and Soft-Switching DC-DC Converters’ by David Reusch and Johan Strydom (19 March, 8:30–10am, TO9-Wide Bandgap Devices in DC-DC Converters);
  • ‘GaN: Raising the Bar for Power Conversion Performance’ by David Reusch (20 March 8:30–11:30am, IS2-4-3, Wide Band Gap Devices); and
  • ‘Design and Evaluation of a 10 MHz Gallium Nitride Based 42 V DC-DC Converter’ by Johan Strydom and David Reusch (20 March 2–5:30pm, T30-Semiconductor Devices, Track: Devices and Components).

Focusing on practical and applied aspects of the power electronics business, APEC addresses the use, design, manufacture and marketing of all kinds of power electronics components and equipment.

“We are honored that the technical review committee of APEC 2014 has selected EPC experts to give technical papers focusing on GaN technology at their annual conference,” says EPC’s co-founder & CEO Alex Lidow. “This selection supports our belief that the superior performance of GaN technology has gained the interest and acceptance of power system design engineers.”

Tags: EPC E-mode GaN FETs

Visit: www.apec-conf.org

Visit: www.epc-co.com

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