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17 December 2014

Custom MMIC launches 4-8GHz GaN LNA

Custom MMIC of Westford, MA, USA, a developer of performance-driven monolithic microwave integrated circuits (MMICs), has added to its growing line of standard gallium nitride (GaN) products with the CMD219, a 4-9GHz low-noise amplifier (LNA) in die form.

Gain is 23dB, P1dB (output power at 1dB compression point) is +18dBm, and the noise figure is 1.1dB across its operating bandwidth. Typical bias conditions are Vdd = 10V @ 100mA and Vgg = -2.3V, although Vdd can vary from 5V to 28V. The CMD219 can also survive input power levels of up to 5W without a front-end limiter.

All ports are matched to 50 Ohm and do not require any off-chip components, apart from the bias networks which require external bypass capacitors.

Suitable applications include point-to-point and point-to-multipoint radios, military and space, and test instrumentation.

See related items:

Custom MMIC launches 5-9GHz GaN LNA

Custom MMIC launches 28-32GHz GaN power amplifier for Ka-band communications

Custom MMIC launches 14-18GHz GaN PA for Ku-band communications

Tags: Custom MMIC MMIC GaN power amplifiers

Visit: www.CustomMMIC.com

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