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30 April 2014

MACOM adds 17 GaN-on-Si RF power transistors and amplifiers to its portfolio

M/A-COM Technology Solutions Inc of Lowell, MA, USA (which makes semiconductors, components and subassemblies for analog, RF, microwave and millimeter-wave applications) has announced the availability and full technical support for 17 high-performance gallium nitride on silicon (GaN-on-Si) RF power transistors and amplifiers recently added to its product portfolio as a result of its acquisition in February of Nitronex LLC of Durham, NC, USA (a designer and manufacturer of GaN-on-Si-based RF power devices).

GaN offers high bandwidth and efficiency for RF applications, including defense communications, land mobile radio, avionics, wireless infrastructure, ISM (industrial, scientific & medical) applications and VHF/UHF/L-bandr. With the addition of these GaN-based RF solutions, MACOM reckons it now has the broadest family of GaN technology in the industry, including fundamental and innovative GaN-on-Si epitaxial and pendeo-epitaxial semiconductor process technology and materials.

“Broadening our portfolio of GaN-on-Si and GaN-on-SiC technologies enables our customers greater flexibility in selecting the best solution to solve their RF and microwave design challenges,” says senior VP & general manager Suja Ramnath. “This, combined with MACOM’s decades of expertise in large-scale RF semiconductor technology, along with surety of supply and deep technical support, is enabling us to accelerate mainstream GaN adoption.”

The latest GaN components are now in stock and available for immediate delivery from MACOM and its distribution partners.

See related items:

MACOM acquires Nitronex for $26m

Tags: M/A-COM GaN-on-Si RF power transistors

Visit: www.macom.com/gan

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