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3 October 2013

EPC introduces development board showcasing 100V eGaN FETs in parallel for high-current applications

Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA has introduced the EPC9017 half-bridge development board for high-current, high-stepdown-voltage, buck intermediate bus converter (IBC) applications using enhancement-mode gallium nitride field-effect transistors (eGaN FETs).

In this application two low-side (synchronous rectifier) FETs are connected in parallel, since they will be conducting for a much longer period compared to the single high-side (control) FET. eGaN FETs have superior current-sharing capability compared to silicon MOSFETs, making them more attractive for parallel operation, says EPC. The development board expands on EPC’s work on optimal layout based on ultra-low-inductance packages.

The EPC9017 development board is a 100V maximum device voltage, 20A maximum output current, half-bridge with onboard gate drives, featuring the EPC2001 eGaN FET. The half-bridge configuration contains a single top-side device and two parallel bottom devices and is recommended for high-current, lower-duty-cycle applications. 

The development board is 2” x 1.5” and contains all critical components and layout for optimal switching performance. There are also various probe points to facilitate simple waveform measurement and efficiency calculation.

EPC9017 development boards are priced at $130 each and are available for immediate delivery from Digi-Key. A Quick Start Guide is included for reference and ease of use.

Tags: EPC E-mode GaN FETs

Visit: http://epc-co.com/epc/documents/guides/EPC9017_qsg.pdf

Visit: www.digikey.com/Suppliers/us/Efficient-Power-Conversion

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