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8 November 2013

Brolis gains €1.6m more EU funding for R&D facilities expansion in 2014

Brolis Semiconductors Ltd of Vilnius, Lithuania says that the Lithuanian Minstry of Economy has approved European Union (EU) structural funds support for the expansion of its R&D facility in 2014. The EU is to cover 46% of the total project cost, which is estimated at €1.6m.

Established by brothers Augustinas Vizbaras, Kristijonas Vizbaras and Dominykas Vizbaras in 2011, the firm specializes in mid-infrared type-I gallium antimonide (GaSb) laser diodes and molecular beam epitaxy (MBE), manufacturing epitaxial wafers for antimonide and arsenide materials for thermal imaging focal plane arrays, CPV and custom devices.

The expansion of R&D facility will include additional cleanroom space and will focus on the development of Brolis’ long-wavelength laser diodes, with particular emphasis on reliability and yield optimization.

“We have managed to start-up the fab in less than 9 months from scratch, which we started operating early this year and we already have pilot devices with state-of-the-art performance, including 25% wall-plug efficiency and high-brightness Watt-level CW laser diodes with extremely low input powers,” says chief technology officer Kristijonas Vizbaras. “Our goal is to continue innovation, and do everything possible to bring these to market as soon as possible,” he adds.

See related items:

President of Lithuania opens Brolis Semiconductors’ MBE and laser diode production facility

Brolis receives Veeco MBE system ready for opening of new epitaxial wafer facility

Tags: Brolis MBE Epitaxial wafers Laser diodes

Visit: www.brolis-semicon.com

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