31 May 2013

MACOM to showcase GaN in plastic-packaged power transistors, shunt diode series and E-band PAs at IMS

In booth #930 at the IEEE MTT International Microwave Symposium (IMS) tradeshow in Seattle, WA, USA (4-6 June), M/A-COM Technology Solutions Inc of Lowell, MA, USA (which makes analog semiconductors, components and subassemblies) is showcasing its broad portfolio of new products for aerospace & defense, wireless backhaul, CATV, and optical communications applications, including:

• gallium nitride (GaN) in plastic-packaged power transistors;

• a shunt diode series;

• E-band MMIC power amplifier;

• 120W switch module for TDD-LTE base station;

• an EML (electro-absorption modulator laser) driver for 100G applications; and

• linear amplifiers for 13/15/18GHz cellular backhaul.

Also, at 1pm on 4 June at the booth of distributor Richardson RFPD (booth #620), MACOM’s Paul Beasly is giving a presentation about the future of GaN.

See related items:

MACOM launches 90W, 50W and 15W GaN in plastic transistors

Tags: M/A-COM

Visit: www.macomtech.com

Visit: http://ims2012.org