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28 June 2013

Plessey releases 350mW GaN-on-Si LEDs

Plessey Semiconductors Ltd of Plymouth, UK says that samples of a 350mW gallium nitride -on-silicon (GaN-on-Si) LED are now available.

The entry-level lighting products (part number PLB010350) are manufactured on Plessey’s 6-inch MAGIC (Manufactured on GaN I/C) line. The new LEDs are targeted at solid-state lighting and entertainment-type lighting products including accent lighting, wall washing, wall grazing, strip-lighting and a variety of pulse lighting applications.

Plessey announced the first commercially available GaN on large-diameter silicon LEDs in April. “The MAGIC LED product range is expanding in both light output and efficacy,” says Plessey's chief operating officer Barry Dennington. “The PLB010350 is our first high-current device, operating at anywhere from 350mA through to 2A in pulse applications,” he adds.

“We have also been able to demonstrate the versatility and the potential of the Plessey GaN-on-Si technology by constructing an LED with a relatively large die area,” continues Dennington. “This new 350mW product demonstrates the inherent flexibility we have for the manufacture of LEDs with a 6-inch GaN-on-silicon substrate in an integrated circuit manufacturing line,” he adds. “We are seeing continual improvements in output efficiencies in the lab, which means we will continue to launch new products in line with our product release plan.”

The use of Plessey’s MAGIC GaN line – which employs standard semiconductor manufacturing processing – provides yield entitlements of more than 95% and fast processing times, providing a significant cost advantage over standard LEDs of similar quality, reckons the firm.

For engineering sample requests, go to Plessey’s website.

Tags: Plessey GaN-on-Si HB-LEDs


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