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26 June 2013

IR and EPC reach settlement, ending litigation

Power semiconductor device maker International Rectifier Corp (IR) of El Segundo, CA, USA has entered into a settlement agreement with El Segundo-based Efficient Power Conversion Corp (EPC) - which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) used in power management applications - that will result in the payment of royalties to IR on the sale of gallium nitride on silicon (GaN-on-Si)-based power devices from 2015-2023, subject to an offset in certain cases.

The settlement resolves all disputes between EPC and certain of EPC’s principals (including co-founder & CEO Dr Alex Lidow) and IR without judicial determination of the merits of any party’s claims or defenses.

IR brought the suit against EPC, Alex Lidow and others in 2009 for misappropriation of trade secrets associated with its GaN-on-Si program.  Lidow had also sued IR for wrongful termination as its CEO. When the settlement occurred, the matter was awaiting trial in the Los Angeles Superior Court.

“This resolution is positive for IR and will allow the company to put this dispute behind us,” believes IR’s president & CEO Oleg Khaykin. “We will continue to direct our attention and resources to the commercialization of our GaN-on-silicon technology platform.”

See related items:

International Rectifier sues former CEO for theft of trade secrets

Tags: International Rectifier EPC GaN-on-silicon GaN FETs



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