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26 February 2013

EPC to present GaN technology at APEC

Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) used in power management applications, will be presenting an educational seminar and several application-focused technical presentations at APEC 2013, Long Beach, CA, USA (17-21 March). 

“We are honored that the technical review committee of APEC 2013 has selected EPC experts to conduct an educational seminar and to give technical papers focusing on GaN technology at their annual conference. This selection supports our belief that the superior performance of GaN technology has gained the interest and acceptance of power system design engineers,” said Alex Lidow, EPC’s co-founder and CEO.

Educational Seminar: GaN Transistors for Efficient Power Conversion
Sunday, March 17 (S.7, 2:30 p.m. – 6:00 p.m.)

This seminar explains how GaN High Electron Mobility Transistors (HEMT) work. It will discuss how to use these devices including showing the drivers, layout, and thermal considerations for high performance and high frequency power conversion. To showcase the real-world value of GaN technology, several applications including high frequency envelope tracking (ET), Intermediate Bus Converters (IBC), and wireless power transmission will be presented. The seminar will conclude with a look at future of this emerging displacement technology.

Technical presentations featuring EPC:

  • Roundtable Discussion
    “Wide band-gap semiconductors - Prime time or promises?”
    Presenter: Alex Lidow
    Tuesday, March 19 (Session 2, 5:00 p.m. – 6:30 p.m.)
  • Technical Sessions   
    “Design of a High Frequency, Low Loss eGaN Converter with Reduced Parasitic Inductances”
    Presenters: David Reusch, Johan Strydom
    Wednesday, March 20 (DC-DC Converters, 2:00 p.m. – 5:30 p.m.)

Tags: EPC GaN GaN FETs



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