20 November 2012

France’s UMI Georgia Tech-CNRS installs Aixtron CCS reactor to grow nitride alloy materials

Deposition equipment maker Aixtron SE of Herzogenrath, Germany says that existing customer UMI Georgia Tech-CNRS in Metz, France has bought a 3x2”-wafer Close Coupled Showerhead (CCS) metal organic chemical vapour deposition (MOCVD) system, to be dedicated to growing nitride alloy R&D materials for light-emitting sources, solar cells, sensors and other applications. Aixtron Europe’s service support team has installed and commissioned the new reactor at the Georgia Tech-Lorraine campus in Metz.

“We are very familiar with Aixtron MOCVD systems,” says professor Abdallah Ougazzaden, director of UMI Georgia Tech-CNRS. “The CCS system perfectly matches our R&D plans in respect of GaN, InN, BN and related alloys for light-emitting sources, solar cells, sensors and other applications, depending on how the semiconductor market evolves,” he adds.  

“We formed a strong relationship with professor Ougazzaden in France and professor Russell Dupuis from Georgia Tech in the US, both of whom have excellent teams covering all aspects of MOCVD nitride R&D,” says Aixtron’s chief operating officer Dr Bernd Schulte. “The Georgia Tech-CNRS International Joint Unit produces excellent scientific output and is actively involved in national and international research programs focusing on secure networks and innovative materials for optics and electronics.”

The Georgia Tech-CNRS International Joint Unit (Unité Mixte Internationale, or UMI) was established between the USA’s Georgia Institute of Technology and France’s CNRS (Centre National de la Recherche Scientifique) to further collaborative research in telecoms and innovative materials. Programs include optoelectronic techniques for signal encryption and secure transmission for optical and wireless systems, nonlinear optics, new materials and nanostructures for photonics and electronics, multi-functional materials, the ultrasonic characterization of materials, and the development of new ultrasonic sensors.

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