17 May 2012

RFMD launches GaAs pHEMT SP3T symmetric switch

RF Micro Devices Inc of Greensboro, NC, USA has launched the RFSW6131, a gallium arsenide (GaAs) pHEMT single-pole three-throw (SP3T) switch designed for use in cellular, 3G, LTE, and other high-performance communications systems. The device has a symmetric topology and offers what is claimed to be excellent linearity and power handling capability. It is also 3V and 5V positive logic compatible.

Features include: LF to 6000MHz operation; low loss of 0.5dB and high isolation of 27dB at 2GHz; a high IP3 of 56dBm; P0.1dB of 31dBm (at 5V and 2.2GHz); and a 1.5mm x 1.5mm DFN (dual-flat no-leads) package.

As well as cellular, 3G and LTE infrastructure and other high-performance communications systems, applications include WiBro, WiMAX and LTE; wireless backhaul; and GMSK, QPSK, DQPSK and QAM modulation.

The RFSW6131 is currently available in production quantities. Pricing begins at $0.60 each in 1000-unit quantities.

Tags: RFMD GaAs GaAs pHEMT SP3T symmetric switch

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