25 July 2012
AZZURRO chooses Veeco K465i MOCVD system for GaN-on-Si epi production
Epitaxial deposition and process equipment maker Veeco Instruments Inc of Plainview, NY, USA says that AZZURRO Semiconductors AG of Magdeburg, Germany, which makes gallium nitride (GaN) epitaxial wafers based on large-area silicon substrates, recently put the TurboDisc K465i GaN metal-organic chemical vapor deposition (MOCVD) system into production. The system is used to make gallium nitride on silicon (GaN-on-Si) wafers for power semiconductors, LED wafers and LED template wafers.
“Our technology provides high-quality, crack-free GaN layers on 150mm standard silicon wafers with very good crystal quality and extremely low bow values,” says AZZURRO’s VP operations Dr Markus Sickmoller. “We chose Veeco’s K465i to produce these high-efficiency GaN-on-Si stacks because of its performance, process stability, and high throughput,” he adds. “Our GaN-on-Si technology will trigger a new wave of highly efficient and cost-optimized components for the LED and power semiconductor industry,” he believes.
“The power electronics device market is forecasted by Yole Developpement to be $25bn by 2015, and GaN has the ability to make devices with higher efficiency and switching speed than traditional Si devices,” notes Veeco’s senior VP, MOCVD, Jeff Hawthorne. “Further, LEDs made with GaN-on-Si technology will enable lower LED costs. We anticipate that the demand for MOCVD tools for these GaN-on-Si applications will grow as technology moves from R&D into production,” he adds. “Veeco's K465i systems offer key advantages for GaN-on-Si production, including low particle count and excellent yields, and we’re looking forward to continuing to support AZZURRO’s growing GaN-on-Si business.”