13 August 2012
RFMD starts shipping power amplifiers for LTE version of Samsung’s Galaxy S3 smartphone
RF Micro Devices Inc of Greensboro, NC, USA has begun production shipments of power amplifiers (PAs) to Samsung in support of its next-generation Galaxy S3 4G LTE smartphone.
RFMD expects to supply the majority of the 3G and 4G power amplifiers in Samsung's highest-volume smartphones this calendar year. The firm already supports multiple feature phones, smartphones and tablets for Samsung with a broad range of products, including PowerSmart power platforms, ultra-high-efficiency power amplifiers, and other critical high-performance components. This most recent 4G LTE smartphone to be supported by RFMD features a dual-core multi-mode 3G/LTE modem.
“These shipments of RFMD’s ultra-high-efficiency 3G/4G power amplifiers to Samsung underscore our strong design momentum in next-generation mobile devices and our early market share leadership in the rapidly growing LTE market,” says Eric Creviston, president of RFMD’s Cellular Products Group. “We currently forecast robust growth in LTE in calendar 2012, as LTE devices grow from approximately 20 million units in calendar 2011 to greater than 100 million units in calendar 2012,” he adds.
RFMD claims that its ultra-high-efficiency 3G and 4G LTE PAs enable increased battery life in smartphones while reducing the thermal impact of advanced data-based applications, including web surfing, video calling and internet radio. The product family covers WCDMA bands 1, 2, 3, 4, 5 and 8, and LTE bands 3, 4, 7, 11, 13, 17, 20 and 21, addressing the most common UMTS/HSPA+ and LTE frequency bands and band combinations.