8 August 2012
M/A-COM Tech launches 40W 2.7-3.5GHz GaN HEMT pulsed power transistor
M/A-COM Technology Solutions Inc of Lowell, MA, USA (which makes analog semiconductors, components and subassemblies for RF, microwave and millimeter-wave applications) has launched a highly efficient 40W pulsed power transistor optimized for civilian and military pulsed radar applications operating at 2.7-3.5GHz.
The MAGX-002735-040L00 is a gold-metalized, internally matched, depletion-mode gallium nitride on silicon carbide (GaN on SiC) RF power transistor with 40W peak output when operated at +50V, class AB operation, using a 300µs pulse and 10% duty cycle pulsed signal.
Based on extensive HTOL (high-temperature operation lifetime) RF accelerated life testing, quantifiable test results demonstrate that the product is designed to provide a mean time to failure (MTTF) of 600 years or better.
“The 800MHz of instantaneous bandwidth and rugged performance makes this versatile device an excellent choice as a driver stage or output stage for any S-band radar power amplifier application,” claims Gary Lopes, senior director for RF Power Technologies.
Manufactured in a thermally enhanced, Cu/Mo/Cu, flanged ceramic package, the MAGX-002735-040L00 has excellent thermal performance as well as high breakdown voltages that allow for reliable and stable operation in extreme mismatched load conditions. Operating at +50V, class AB, the pulsed power transistor provides 40W of peak power at 55% drain efficiency with a minimum power gain of 10.5dB across the full 2.7-3.5GHz frequency band.
Tags: M/A-COM Tech