2 September 2011

Skyworks unveils high-gain, high-linearity LNAs for cellular infrastructure

Skyworks Solutions Inc of Woburn, MA, USA, which makes linear products, power amplifiers, front-end modules and radio solutions for handset and infrastructure equipment, has launched a series of high-gain, two-stage low-noise amplifiers (LNAs) employing both gallium arsenide pseudomorphic high-electron-mobility transistor (pHEMT) and heterojunction bipolar transistor (HBT) technologies, offering very low noise figure, high linearity and what is claimed to be excellent return loss in a small, quad flat, 4mm squared leadless package.

On-die, active-bias design ensures consistent performance and enables unconditional stability, says Skyworks. The pHEMT front-end enables ultra-low noise figure, while the HBT-based output stage provides both high linearity and efficiency.

The SKY67105-306LF (0.6–1.1GHz) and SKY67106-306LF (1.5–3.0GHz) high-gain, low-noise amplifiers are suited to cellular infrastructure applications such as tower-mounted amplifiers, remote radio units, repeaters and base stations, says the firm. The new LNAs also enable traditional wireless infrastructure OEMs and broad market wireless OEMs that provide small cost-sensitive receivers to offer very low noise amplification (<0.75db noise figure), high linearity (+38dBm OIP3), and higher gain (>32db) than typically provided by a single-stage LNA solution.

Tags: Skyworks LNAs GaAs pHEMT HBT

Visit: www.skyworksinc.com