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25 October 2011

Aixtron provides Infineon with G5 reactor for power HEMT GaN-on-Si development

Deposition equipment maker Aixtron SE of Herzogenrath, Germany says that its customer Infineon Technologies AG has reached the first stage in its plans to evaluate gallium nitride on silicon (GaN-on-Si) power HEMTs (high-electron-mobility transistors) with the final acceptance of its new Aixtron AIX G5 HT metal-organic chemical vapor deposition (MOCVD) reactor.

In September, Infineon confirmed process acceptance of the system in 8x6-inch wafer configuration, with the option to upgrade to 5x8-inch.

“We look forward to further enhance our plans in the field of GaN on silicon. Our teams are confident that this is an excellent match to our strategy of delivering high-quality, high-reliability devices with outstanding performance,” says Dr Franz Auerbach, senior director R&D for Power Management & Supply Discretes at Infineon Technologies. “This is fully consistent with Infineon´s strategy to continue to lead the power conversion market, enabling customers to help reduce energy losses,” he adds.

“The industry is reaching a new level in power electronic devices where high performance and cost effectiveness are demanded,” comments Aixtron chief operating officer Dr Bernd Schulte. “To achieve these challenging, sometimes conflicting requirements only the best process equipment will do. We are very proud to share with this prestigious customer all of the state-of-the-art technology that comes with our latest generation MOCVD system, the AIX G5 HT,” he adds.

See: Aixtron Company Profile

Tags: Aixtron MOCVD AIX G5 HT

Visit: www.aixtron.com

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CrystAL-N - Substrates for epitaxy