18 July 2011

AWR announces Microwave Office model library for Mitsubishi’s nonlinear GaAs & GaN RF devices 

AWR Corp of El Segundo, CA, USA, a supplier of electronic design automation (EDA) software for designing RF and high-frequency components and systems, has announced the availability of a Microwave Office model library for Mitsubishi Electric’s nonlinear gallium arsenide (GaAs) and gallium nitride (GaN) RF devices.

The model library includes high-power and low-noise high-electron-mobility transistor (HEMT) devices, which are commonly used in base-station and DBS receivers and other radio communications equipment, given their high-power, high-efficiency, broadband and low-noise advantages. AWR says that the new model library helps designers better explore design alternatives while meeting demanding performance specs with a cost-effective solution.

“The good collaboration between AWR’s engineers and our own resulted in a robust and reliable model library,” says Takao Ishida, manager of Wireless Communication Device Application Engineering Section at Mitsubishi Electric High Frequency & Optical Device Works. “This now means that AWR’s customers have timely access to our nonlinear RF models,” he adds.

Customers and potential customer of AWR software are invited to learn more about the new model library at the AWR Asia Design Forum (ADF 2011) in Tokyo, Japan on 22 July.

AWR’s Microwave Office library for Mitsubishi Electric’s nonlinear RF models is free for use within Microwave Office software (release 2010 and later) for active, licensed AWR customers.

Tags: AWR EDA Mitsubishi Electric GaAs GaN RF devices

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