| Home | About Us | Contribute | Bookstore | Advertising | Subscribe for Free NOW! |
| News Archive | Features | Events | Recruitment | Directory |
News
2 November 2010
TriQuint launches 30W GaN PA with 30% PAE for counter-IED EW/defense systems
At this week’s annual Military Communications (MILCOM 2010) conference in San Jose, (31 October – 3 November), RF component maker and foundry services provider TriQuint Semiconductor Inc of Hillsboro, OR, USA is launching a 30W gallium nitride (GaN) power amplifier with high power and efficiency for counter-IED (C-IED) and other EW (electronic weapons) systems.
Fabricated using TriQuint’s production-released GaN-on-SiC process, the TGA2576 delivers 30W of saturated output power in the 2.5-6GHz range. It typically offers power-added efficiency (PAE) of 30% and small-signal gain of 25dBm.
Die-level samples will be available by the end of November; packaged samples are expected in early 2011.
Visit: www.triquint.com
For more: Latest issue of Semiconductor Today
©2010 Juno Publishing and Media Solutions Ltd. All rights reserved. Semiconductor Today and the editorial material contained within it and related media is the copyright of Juno Publishing and Media Solutions Ltd. Reproduction in whole or part without permission from Juno Publishing and Media Solutions Ltd is forbidden. In most cases, permission will be granted, if the author, magazine and publisher are acknowledged.
Disclaimer: Material published within Semiconductor Today and related media does not necessarily reflect the views of the publisher or staff. Juno Publishing and Media Solutions Ltd and its staff accept no responsibility for opinions expressed, editorial errors and damage/injury to property or persons as a result of material published.
Semiconductor Today, Juno Publishing and Media Solutions Ltd, Suite no. 133, 20 Winchcombe Street, Cheltenham, GL52 2LY, UK
Web site by No Name No Slogan 