News

25 May 2010

 

Toshiba expands C-band GaAs FET lineup with PAs optimized for high gain and PAE

At this week’s IEEE MTT-S International Microwave Symposium (IMS 2010) in Anaheim, CA, USA (25-27 May), Toshiba America Electronic Components Inc (TAEC) and its parent company Toshiba Corp of Japan are announcing the expansion of its gallium arsenide field-effect transistor (GaAs FET) lineup with the availability of samples of a new EL series of C-band devices targeted at microwave radios and solid-state power amplifiers (SSPAs).

“Toshiba’s new EL series offers the highest level of performance of our three series of C-band GaAs FETs, with both high power-added efficiency and high gain [complementing the UL series with medium power-added efficiency and gain and the SL series with standard performance for this wavelength]," says Homayoun Ghani, business development manager, Microwave, Logic, and Small-Signal Devices, in TAEC’s Discrete business unit.

The first three devices in the EL series are 16W GaAs FETs targeted at three different C-band frequency ranges:

• The TIM6472-16EL operates at 6.4-7.2GHz, with typical output power at 1dB gain compression point (P1dB) of 42.5dBm and power gain at 1dB gain compression point (G1dB) of 11.0dB, and power-added efficiency (PAE) of 37%. It offers increases in gain of 4.0dB and 1.5dB compared to the similarly rated 16W devices in the SL and UL series (TIM6472-16SL and TIM6472-16UL), respectively.

• The TIM7179-16EL operates at 7.1-7.9GHz, with typical P1dB of 42.5dBm, G1dB of 10.5 dB and PAE of 37%. It offers increases in gain of 4.0dB and 2.0dB compared to the similarly rated 16W devices in the SL and UL series (TIM7179-16SL and TIM7179-16UL), respectively.

• The TIM7785-16EL operates at 7.7-8.5GHz, with typical P1dB of 42.5dBm, G1dB of 10.0dB and PAE of 36%. It offers increases in gain of 4.5dB and 1.5dB compared to the similarly rated 16W devices in the SL and UL series (TIM7785-16SL and TIM7785-16UL), respectively.

“With these high-gain FETs and a newly developed 4W monolithic microwave integrated circuit (MMIC), also introduced during this exhibition, we offer a two-chip solution for microwave radio design,” Ghani says. “It eliminates the requirement for a mid-stage 4W discrete FET typically used in existing three-chip solutions, improves design flexibility, and saves board space and cost by reducing part count.”

With a broad bandwidth of 5.65-8.50GHz, high gain of 27dB throughout this operating range and 50 ohm internal matching, the TMD0608-4 4W GaAs MMIC (for sample availability Q3/2010) is suitable for use as a pre-amplifier in C-band satellite and terrestrial communications. Housed in a hermetically sealed package, the TMD0608-4 has typical P1dB of 35.5dBm, G1dB of 27dB.

“Use of a broad band, internally matched amplifier can reduce the varieties of board design for different C-band requirements, save board space by minimizing the number of discrete amplification stages, and increase design reliability due to a reduced part count,” says Ghani.  

Search: Toshiba GaAs FETs C-band Microwave radios SSPAs

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