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RF Micro Devices Inc of Greensboro, NC, USA is sampling the CXE-1089Z GaAs pHEMT low-noise amplifier (LNA) for use in cable set-top box and digital television (DTV) applications, optimized for both low noise figure and low current consumption in order to best satisfy the increasing performance requirements of next-generation, higher-bandwidth devices.

Housed in a compact SOT-89 package, the CXE-1089Z features RFMD’s patented active bias circuitry, which stabilizes bias current across changes in threshold voltage related to temperature and process variation, reducing current consumption. The LNA also uses a Darlington configuration with an optional external bias control, which further reduces current consumption - and lowers the thermal profile of the end product - while maintaining linear RF performance optimized for each application.

“Unlike competing devices focused on a single performance parameter, the CXE-1089Z delivers an optimized blend of low noise figure, low multi-carrier distortion and low current consumption,” claims Alastair Upton, general manager of RFMD’s Broadband and Consumer business unit. “This unique blend of performance, combined with our ability to deliver a broad portfolio of CATV products, were key elements to RFMD’s recent design win at a leading set-top box and tuner module OEM with the CXE-1089Z,” he adds.

Features of the CXE-1089Z include: 5V single-supply operation; a noise figure of 2.8dB (typical); composite triple beat (CTB) distortion of -79dBc and composite second order (CSO) distortion of -66dBc at 110 channels; +15dBmV/channel at the input; gain response of 13dB +/- 0.4dB over 50 to 1000MHz ; and input return loss of greater than 18dB . Based on design-win activity, RFMD anticipates volume shipments to start this year.

See related item:

RFMD launches first GaN CATV amplifier modules

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