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Maker of silicon carbide (SiC) discrete power devices and epiwafers, SemiSouth Laboratories Inc of Austin, TX, USA has been awarded two U.S. patents. With the two new awards, SemiSouth now owns or has exclusive license to a total of eleven patents in the field of SiC power electronics.

Patent 7,294,860 – “Monolithic Vertical Junction Field Effect Transistor & Schottky Barrier Diode Fabricated From Silicon Carbide & Method of Fabricating the Same” and 7,274,083 – “Semiconductor Device w/ Surge Current Protection & Method of Making” cover power management topics, such as integration of SiC JFET, diodes, circuits, and process designs for SiC power JFETs. The new patents were the result of work led by Dr Igor Sankin and Dr Mike Mazzola.

SemiSouth says that its SiC JFETs replace silicon MOSFETs, IGBTs, or BJTs and can eliminate more than 50% of the energy losses in power converters used in these applications such as solar power, computing, motor drive, automotive and aerospace.

“Our qualification partners have provided very positive feedback on our rugged, reliable, and very power efficient SiC power JFET,” said Jeff Casady, SemiSouth’s chief operating officer. “In today’s energy conscious world, this technology provides us and our customers with an extremely exciting business opportunity.”

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