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Mid-IR AlGaN quantum cascade detector on silicon

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Quantum dot laser diodes on CMOS-compatible on-axis silicon substrates

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GaN vertical-channel junction field-effect transistors

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Increasing current performance in III–nitride p-channel transistors

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Laser annealing enables gate-first fabrication of III-nitride transistors

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Improving ohmic contacts in III-nitride high-electronmobility transistors

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GaN power market growing at CAGR of 55% to 2023, driven by power supply segment, or 93% if adopted for wireless charging in consumer electronics

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Mini-LED adoption driven by high-end LCD displays and narrow-pixel-pitch LED direct-view digital signage

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Towards ultraviolet optoelectronic systems on silicon substrates

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High-performance light emission from III–nitride stress/dislocation control

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Low threading-dislocationdensity heteroepitaxial AlN film on sapphire

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Large-area silicon carbide ultraviolet visible-blind avalanche photodiode

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Protecting ‘Made in America’ ingenuity

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Peking provides evidence of substitutional C atoms occupying N site with –1 charge state in semi-insulating GaN

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III-V heterojunction bipolar transistor MOCVD on 200mm (001) silicon

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Bragg reflector structures combined within graded buffer for lower-cost, higher-efficiency multi-junction solar cells

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Argon-ion-enhanced room-temperature bonding with low resistance

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Mid-to-long wavelength IR emitters and detectors

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IR light source market to grow at 29% CAGR from $1.8bn in 2018 to $6.5bn in 2023

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Magnetic sensing with GaN high-electron-mobility transistors

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Silicon monoxide gate dielectric for gallium nitride transistors

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Thin gallium nitride on silicon carbide high-power and high-frequency electronics

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Activating buried p-type GaN for power electronics

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Photo-electro-chemical deep trench etching in GaN

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III-nitride solar cells on h-BN separation layer

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Technology advances paving way for micro-LED cost reduction in high-volume applications

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Atomic-layer sidewall passivation of InGaN μLEDs

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Amber light for zinc tin nitride boost from InGaN wells

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Structures to enhance light extraction in InGaN LEDs

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Advancing InGaN VCSELs

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Integrating capacitors into p-GaN gate transistors on silicon

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Gallium oxide transistors increase breakdown to 1.8kV

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Plasmon-enhanced mid-IR photodetection at room temperature

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Hole gas boost for deep UV diode wall-plug efficiency

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Monolithic InP on silicon growth for optoelectronics

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Undoped gallium nitride upper waveguide for reduced laser threshold

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High-material-yield halogenfree vapor phase epitaxy of GaN

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Improving AlGaN transistor channel performance

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Fujitsu triples output power of gallium nitride HEMTs

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Agnitron develops MOCVD capability for 10kV+ β-phase gallium oxide switches

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Speeding oscillation of double heterojunction bipolar transistors

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Tokyo Institute of Technology develops n- and p-type copper nitride semiconductor for environmentally friendly thin-film photovoltaics

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NREL develops dual-chamber dynamic HVPE, targeting III–Vs solar cells at $0.20–0.80 per watt

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Room-temperature PL from III-IV-V semiconductor alloys

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Monolithic InP on silicon growth for optoelectronics

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Mechanism unveiled for strain relaxation in (0001)-oriented III-nitride thin films & heterostructures

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Strain engineering higher hole density in N-polar aluminium gallium nitride

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AlInN as interlayer for greenemitting multi-quantum wells

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UCLA develops defect-free boron arsenide as most efficient semiconductor material for thermal management

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GaAs wafer market growing at 15% CAGR to 2023, driven by photonics applications growing at 37%

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NTT and Tokyo Institute of Technology develop IC allowing 100Gbps wireless transmission in 300GHz band

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Expanding the potential of hydride vapor phase epitaxy

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Schottky diodes integrated in vertical GaN transistors on silicon

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SiC power semiconductor market growing at 29% CAGR to $1.4bn in 2023, aided by automotive adoption

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Improving magnesium doping of aluminium gallium nitride

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Near-UV optoelectronic transmitter/receiver system

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Electro-absorption modulators for VCSELs

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Indium arsenide quantum dot laser on silicon from molecular beam epitaxy

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Platform for fully vertical GaN-on-silicon power devices

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Normally-on gallium nitride nanowire transistors with inverted p-channel

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Silicon carbide superjunction Schottky junction diodes

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Ohio State uses modulation doping to demonstrate high electron mobility in gallium oxide

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High-voltage gallium oxide transistors with more than 1kV breakdown

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ZTE denial and the semiconductor supply chain

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Widening the prospects for gallium oxide power electronics

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InAs-channel transistors for millimeter-wave and high-speed applications

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Tunneling to green light emission with improved efficiency performance

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Silicon hole injector for deep ultraviolet AlGaN diodes

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Near-ultraviolet AlGaN laser diode on silicon

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Silicon photonics reaches tipping point, with transceivers shipping in volume

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