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July / August 2016
Flexible ultra-thin gallium arsenide photovoltaic devices
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Yellow-green indium gallium nitride quantum dot laser
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Sodium flux route to free-standing gallium nitride substrates
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Correcting charge polarization calculations
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Probing potential to understand efficiency droop in InGaN LEDs
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Dependence of efficiency droop on carrier density in non-polar samples
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Boosting hole injection by including indium gallium nitride in two-layer p-contact
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Relaxing multiple quantum wells with low-temperature barriers
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Integrating gallium nitride optoelectronics on silicon
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Zirconium dioxide dielectric for gallium nitride high-mobility transistors
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Bi-directional silicon carbide planar insulated-gate bipolar transistor
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Reaching new heights by producing 1200V SiC MOSFETs in CMOS fab
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Infineon's acquisition of Wolfspeed just the beginning of collaborations in SiC power electronics
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June / July 2016
Integrating silicon photonics and III-V photodetectors in micro-spectrometer
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Direct growth of InAs quantum dots on silicon
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Epitaxial growth of laser diodes on wafer-bonded InP/Si substrates
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Growing crystalline gallium nitride nanowires on flexible titanium foil
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Quaternary superlattice for electron-blocking layers
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Thin-barrier quantum wells increase bandwidth of cyan light-emitting diode
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Speed up for indium gallium nitride two-dimensional electron gas
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Hybrid III-nitride and silicon carbide high-voltage power transistors
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SiC power market growing at CAGR of 19% to 2021 as it spreads to more applications
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May / June 2016
Looking to the future with III-V finFETs
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Fully vertical gallium nitride p-i-n diode grown on silicon substrate
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III-nitride high-electronmobility transistors on flexible tape
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Wafer-scale lift-off of III-nitride epitaxial layers with boron nitride
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Coplanar fabricated indium gallium nitride light-emitting diodes
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SiO2 charge inverter boosts hole injection in InGaN LEDs
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Aluminium gallium nitride nanowire UV LED fabricated on metal foil
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Quantum well/barrier intermixing blue-shift of indium gallium phosphide
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Apr / May 2016
Noise and aluminium indium arsenide antimonide avalanche photodiodes
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NREL theory overcomes barrier to using 2D semiconductors in electronic and opto devices
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ORNL-led group grows aligned monolayers of latticemismatched semiconductors
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Exciton control in molybdenum disulfide
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Tantalum barrier reduces gallium phosphide contact resistance
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Indium gallium nitride barriers enhance LED power and efficiency
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Thermal droop in indium gallium nitride light-emitting diodes
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GaN RF device market to grow at 14% CAGR, rising by 2.5x by end-2022
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Vertical, CMOS and dual-gate approaches to gallium nitride power electronics
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Indium gallium arsenide MOSFET used as radio-frequency switch
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III-V field-effect transistor transconductance record
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Mar 2016
Vertical epitaxial heterostructure GaAs optical transducers
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Taking the temperature of light-emitting diode external quantum efficiency
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Improving performance of InGaN LEDs on sapphire substrates
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Hybrid MOCVD/MBE growth of III-nitride tunnel junctions
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HRL creates low-carbon gallium nitride layers for Schottky barrier diodes
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Aluminium ion implants for lateral gallium nitride transistors
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Going beyond gallium nitride transistor state-of-the-art performance
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Increasing gallium nitride MOSFET threshold voltage
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Non-alloyed contacts for gallium arsenide devices
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Feb 2016
Ultraviolet photodetectors on free-standing gallium nitride
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Low-threading-dislocation AlGaN template for ultraviolet lasers
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Low-threshold yellow laser diodes
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Exploring resonant energy transfer from InGaN wells to polymers
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Thinning buffer layers for GaN-on-silicon light-emitting diodes
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Scandium nitride buffer for gallium nitride on silicon applications
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Reducing current leakage in aluminium gallium nitride transistors on silicon
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Pushing on the vertical limits of gallium nitride power electronics
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High-mobility AlGaN/GaN heterostructures grown on silicon substrates using simple stress control technique
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Single-crystal gallium arsenide on quasi-nominal silicon
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Toward quantum computing on silicon-on-insulator platform
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Dec/Jan 2016
Gallium nitride phosphide absorber for silicon-based solar power
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Efficient combination of quantum cascade laser and detectors
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II-VI semiconductor green laser diode achieves lower current threshold
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Vertical conduction and ultraviolet laser diodes on bulk gallium nitride
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Magnesium ion implantation of gallium nitride
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Hole injection from V-pits into indium gallium nitride quantum wells
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Suppressing current collapse in normally-off gallium nitride transistor
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Increasing carrier lifetimes for high-voltage silicon carbide
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Compound semiconductor electronics manufacturability on silicon
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Electron trapped in InGaAs quantum dots on GaAs reveals qubit information loss mechanisms
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Metal deposition of acoustic wave devices for mobile & Internet of Things
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'Dialing-in' wet processing parameters for compound semiconductor manufacturing
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November 2015
PLAT4M silicon photonics supply-chain project develops three mature platforms
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Slanted trench approach to side-mode suppression in Fabry–Perot laser diodes
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Tunnel junction for verticalcavity surface-emitting laser
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Alternating current LEDs on silicon substrates
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Polarized white LED without phosphor conversion
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Strategies to avoid efficiency drooping in white light-emitting diodes
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Improving performance of magnesium doping for p-type gallium nitride
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Quaternary III-nitride barrier boosts two-dimensional electron gas
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Bulk gallium nitride substrate enables 4kV-breakdown vertical p-n diode
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Claiming record 4.7kV breakdown for gallium nitride p-n diodes
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October 2015
Transverse-coupled-cavity VCSEL with 30GHz bandwidth at 850nm
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Auger recombination the primary cause of efficiency droop, say simulations
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Reducing damage in gallium nitride inductively coupled plasma etch
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Plasma pre-treatment for gallium nitride chemical mechanical polishing
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Microwave anneal process for gallium nitride transistors
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Improving aluminium nitride barriers with low-temperature pulsed MOCVD
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Forward-bias gate breakdown in HEMTs with enhancementmode p-GaN gate electrodes
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High-performance GaN on low-resistance silicon
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Working to roll out GaN electronics applications
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Power GaN device IP dynamics heralds future ramp-up of market
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SiC, GaN and other wider-bandgap materials present new choices for power electronics
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September 2015
Transparent conductive oxides and wafer bonding of III-Vs and silicon
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Mid-infrared interband cascade lasers on indium arsenide substrate
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Lowering threshold currents for m-plane III-nitride VCSELs
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Aluminium indium gallium nitride nanowire LEDs on silicon
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Electrochemical potentiostatic activation of p-gallium nitride
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Neutral pH electrochemical etching of silicon-doped gallium nitride
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High-temperature recess for normally-on gallium nitride transistors
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Substrates for III-nitride vertical power electronic devices
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High-pressure anneal for indium gallium arsenide transistors
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Tellurium doping for n-type indium gallium arsenide
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July/August 2015
Grading gallium indium nitride arsenide for multi-junction solar cells
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Creating heterojunctions between black phosphorous and gallium arsenide
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Creating n-InP/p-Si heterojunctions with lateral overgrowth
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Arizona State demonstrates first monolithic white lasers
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Increasing the power and efficiency of 265nm-wavelength LEDs
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Long-wavelength N-polar indium gallium nitride LEDs
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Indium surfactant for higher hole concentration in gallium nitride
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Nanoscale optoelectronic heterogeneity in monolayer MoS2 accompanied by 300nm-wide, energetically disordered edge region
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2D transistor made from dual-phase transition-metal dichalcogenide crystal
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Getting ready for indium gallium arsenide high-mobility channels
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Metal-insulator-semiconductor gated hybrid anode GaN-on-silicon diode
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SiC market to treble and GaN to explode — if challenges are overcome
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June/July 2015
Room-temperature wafer bonding for multi-junction III-V solar cells
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Laser diodes for mid-IR spectroscopy
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Enhancing optical confinement for III-nitride semiconductor laser diodes
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Improving gallium nitride LED material quality using carbon nanotubes
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Gallium nitride HEMT-LED without metal interconnection
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Toyoda Gosei achieves specific on-resistance of less than 2mΩ-cm2
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Vertical gallium nitride transistors with buried p-type current blocking
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Current gain in III-nitride hot-electron transistors
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May/June 2015
Long-wavelength room-temperature InAs interband cascade lasers
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Red lasers from III-nitride nanowire forests on silicon
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Sidewall emissionenhancement for deep UV light-emitting diodes
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Stressed out InAlN/GaN fin- HEMT boosts performance
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Raising GaN Schottky diode breakdown with recessed double-field plate anode
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Opening windows for silicon carbide junction termination extensions
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InGaAs-on-insulator transistors with buried yttrium oxide
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Direct demonstration of 1THz performance in InP HEMTs
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April/May 2015
Electrical injection of rolled-up heterostructure lasers
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Ultraviolet random AlGaN nanowire array lasers
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Implications for LEDs of the shift to large-diameter sapphire wafers
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Discrepancy in carrier density estimates for HVPE GaN templates
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Fireflies, genetics and GaN light-emitting diodes
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Combining van der Waals technologies to make light-emitting diodes
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Hole modulation for increased light output power from InGaN LED
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China to comprise half of all LED epi & chip equipment spending in 2015–2016
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GaN MOCVD reactor installations to total 220 in 2015
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Meeting manufacturing challenges for GaN-on-Si power IC devices
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Direct growth of indium gallium nitride on silicon substrate
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High-mobility channels and moving beyond silicon
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March 2015
High-temperature and concentrated photovoltaic performance of GaInN wells
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Photonic crystal improves light output of InGaN LED by 42% at 350mA
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Plasma-assisted molecular beam epitaxy of indium gallium nitride
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Silver nanowires and compound semiconductor optoelectronics
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More absorbent 2D stacks through layer transfer rather than epitaxy
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Prospect of accurate p-type silicon-doped gallium arsenide antimonide
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Diamond-like carbon used to improve performance of GaN HEMTs
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Reducing gate leakage and current collapse in GaN HEMTs on silicon
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Gallium nitride transistors fabricated on cubic silicon carbide on silicon
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Power electronics market grew in 2014 after two years of stagnation
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February 2015
Power & speed highlights for compound semiconductors
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Millimeter-wave performance of gallium nitride transistors on silicon substrates
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Boron nitride releases GaN transistors from self-heating degradation
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Double heterostructure with InGaN channel demonstrates high mobility
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Resistance memory with all-nitride structure
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Staircase quantum barriers to improve LED efficiency at high current
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Thicker InGaN wells enabled by semi-polar (3031) substrate
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UV LED market to grow from $90m to $520m in 2019
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First 250nm-wavelength nanowire LEDs claimed
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Terahertz radiation from mid-infrared quantum cascade lasers
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January 2015
GaAs/InP wafer bonding with low electrical resistance
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Double metal waveguide yields mid-IR quantum cascade laser with 24.4μm wavelength
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Reducing threshold current in 3μm laser diodes
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Non-polar AlN growth for enhancing deep UV optoelectronics
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Hot holes for improved injection into nitride LEDs
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LED makers to raise technology entry level and find new applications to boost profitability in 2015
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Expanding interest in cubic silicon carbide on silicon substrates
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First application of low-cost deposition of titanium dioxide for GaN MOS-HEMT
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RF performance of junctionless trigate GaN FETs
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Diamond transistor achieves 1530V breakdown voltage
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