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Each month we select articles from the latest issue of Semiconductor Today magazine and make them available here for free download. To see all the articles available each month in Semiconductor Today, please register for free now.

July / August 2016

Flexible ultra-thin gallium arsenide photovoltaic devices

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Yellow-green indium gallium nitride quantum dot laser

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Sodium flux route to free-standing gallium nitride substrates

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Correcting charge polarization calculations

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Probing potential to understand efficiency droop in InGaN LEDs

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Dependence of efficiency droop on carrier density in non-polar samples

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Boosting hole injection by including indium gallium nitride in two-layer p-contact

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Relaxing multiple quantum wells with low-temperature barriers

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Integrating gallium nitride optoelectronics on silicon

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Zirconium dioxide dielectric for gallium nitride high-mobility transistors

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Bi-directional silicon carbide planar insulated-gate bipolar transistor

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Reaching new heights by producing 1200V SiC MOSFETs in CMOS fab

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Infineon's acquisition of Wolfspeed just the beginning of collaborations in SiC power electronics

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June / July 2016

Integrating silicon photonics and III-V photodetectors in micro-spectrometer

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Direct growth of InAs quantum dots on silicon

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Epitaxial growth of laser diodes on wafer-bonded InP/Si substrates

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Growing crystalline gallium nitride nanowires on flexible titanium foil

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Quaternary superlattice for electron-blocking layers

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Thin-barrier quantum wells increase bandwidth of cyan light-emitting diode

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Speed up for indium gallium nitride two-dimensional electron gas

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Hybrid III-nitride and silicon carbide high-voltage power transistors

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SiC power market growing at CAGR of 19% to 2021 as it spreads to more applications

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May / June 2016

Looking to the future with III-V finFETs

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Fully vertical gallium nitride p-i-n diode grown on silicon substrate

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III-nitride high-electronmobility transistors on flexible tape

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Wafer-scale lift-off of III-nitride epitaxial layers with boron nitride

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Coplanar fabricated indium gallium nitride light-emitting diodes

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SiO2 charge inverter boosts hole injection in InGaN LEDs

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Aluminium gallium nitride nanowire UV LED fabricated on metal foil

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Quantum well/barrier intermixing blue-shift of indium gallium phosphide

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Apr / May 2016

Noise and aluminium indium arsenide antimonide avalanche photodiodes

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NREL theory overcomes barrier to using 2D semiconductors in electronic and opto devices

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ORNL-led group grows aligned monolayers of latticemismatched semiconductors

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Exciton control in molybdenum disulfide

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Tantalum barrier reduces gallium phosphide contact resistance

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Indium gallium nitride barriers enhance LED power and efficiency

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Thermal droop in indium gallium nitride light-emitting diodes

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GaN RF device market to grow at 14% CAGR, rising by 2.5x by end-2022

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Vertical, CMOS and dual-gate approaches to gallium nitride power electronics

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Indium gallium arsenide MOSFET used as radio-frequency switch

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III-V field-effect transistor transconductance record

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Mar 2016

Vertical epitaxial heterostructure GaAs optical transducers

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Taking the temperature of light-emitting diode external quantum efficiency

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Improving performance of InGaN LEDs on sapphire substrates

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Hybrid MOCVD/MBE growth of III-nitride tunnel junctions

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HRL creates low-carbon gallium nitride layers for Schottky barrier diodes

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Aluminium ion implants for lateral gallium nitride transistors

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Going beyond gallium nitride transistor state-of-the-art performance

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Increasing gallium nitride MOSFET threshold voltage

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Non-alloyed contacts for gallium arsenide devices

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Feb 2016

Ultraviolet photodetectors on free-standing gallium nitride

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Low-threading-dislocation AlGaN template for ultraviolet lasers

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Low-threshold yellow laser diodes

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Exploring resonant energy transfer from InGaN wells to polymers

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Thinning buffer layers for GaN-on-silicon light-emitting diodes

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Scandium nitride buffer for gallium nitride on silicon applications

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Reducing current leakage in aluminium gallium nitride transistors on silicon

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Pushing on the vertical limits of gallium nitride power electronics

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High-mobility AlGaN/GaN heterostructures grown on silicon substrates using simple stress control technique

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Single-crystal gallium arsenide on quasi-nominal silicon

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Toward quantum computing on silicon-on-insulator platform

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Dec/Jan 2016

Gallium nitride phosphide absorber for silicon-based solar power

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Efficient combination of quantum cascade laser and detectors

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II-VI semiconductor green laser diode achieves lower current threshold

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Vertical conduction and ultraviolet laser diodes on bulk gallium nitride

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Magnesium ion implantation of gallium nitride

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Hole injection from V-pits into indium gallium nitride quantum wells

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Suppressing current collapse in normally-off gallium nitride transistor

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Increasing carrier lifetimes for high-voltage silicon carbide

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Compound semiconductor electronics manufacturability on silicon

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Electron trapped in InGaAs quantum dots on GaAs reveals qubit information loss mechanisms

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Metal deposition of acoustic wave devices for mobile & Internet of Things

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'Dialing-in' wet processing parameters for compound semiconductor manufacturing

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November 2015

PLAT4M silicon photonics supply-chain project develops three mature platforms

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Slanted trench approach to side-mode suppression in Fabry–Perot laser diodes

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Tunnel junction for verticalcavity surface-emitting laser

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Alternating current LEDs on silicon substrates

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Polarized white LED without phosphor conversion

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Strategies to avoid efficiency drooping in white light-emitting diodes

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Improving performance of magnesium doping for p-type gallium nitride

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Quaternary III-nitride barrier boosts two-dimensional electron gas

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Bulk gallium nitride substrate enables 4kV-breakdown vertical p-n diode

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Claiming record 4.7kV breakdown for gallium nitride p-n diodes

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October 2015

Transverse-coupled-cavity VCSEL with 30GHz bandwidth at 850nm

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Auger recombination the primary cause of efficiency droop, say simulations

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Reducing damage in gallium nitride inductively coupled plasma etch

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Plasma pre-treatment for gallium nitride chemical mechanical polishing

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Microwave anneal process for gallium nitride transistors

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Improving aluminium nitride barriers with low-temperature pulsed MOCVD

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Forward-bias gate breakdown in HEMTs with enhancementmode p-GaN gate electrodes

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High-performance GaN on low-resistance silicon

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Working to roll out GaN electronics applications

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Power GaN device IP dynamics heralds future ramp-up of market

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SiC, GaN and other wider-bandgap materials present new choices for power electronics

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September 2015

Transparent conductive oxides and wafer bonding of III-Vs and silicon

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Mid-infrared interband cascade lasers on indium arsenide substrate

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Lowering threshold currents for m-plane III-nitride VCSELs

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Aluminium indium gallium nitride nanowire LEDs on silicon

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Electrochemical potentiostatic activation of p-gallium nitride

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Neutral pH electrochemical etching of silicon-doped gallium nitride

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High-temperature recess for normally-on gallium nitride transistors

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Substrates for III-nitride vertical power electronic devices

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High-pressure anneal for indium gallium arsenide transistors

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Tellurium doping for n-type indium gallium arsenide

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July/August 2015

Grading gallium indium nitride arsenide for multi-junction solar cells

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Creating heterojunctions between black phosphorous and gallium arsenide

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Creating n-InP/p-Si heterojunctions with lateral overgrowth

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Arizona State demonstrates first monolithic white lasers

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Increasing the power and efficiency of 265nm-wavelength LEDs

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Long-wavelength N-polar indium gallium nitride LEDs

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Indium surfactant for higher hole concentration in gallium nitride

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Nanoscale optoelectronic heterogeneity in monolayer MoS2 accompanied by 300nm-wide, energetically disordered edge region

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2D transistor made from dual-phase transition-metal dichalcogenide crystal

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Getting ready for indium gallium arsenide high-mobility channels

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Metal-insulator-semiconductor gated hybrid anode GaN-on-silicon diode

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SiC market to treble and GaN to explode — if challenges are overcome

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June/July 2015

Room-temperature wafer bonding for multi-junction III-V solar cells

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Laser diodes for mid-IR spectroscopy

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Enhancing optical confinement for III-nitride semiconductor laser diodes

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Improving gallium nitride LED material quality using carbon nanotubes

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Gallium nitride HEMT-LED without metal interconnection

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Toyoda Gosei achieves specific on-resistance of less than 2mΩ-cm2

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Vertical gallium nitride transistors with buried p-type current blocking

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Current gain in III-nitride hot-electron transistors

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May/June 2015

Long-wavelength room-temperature InAs interband cascade lasers

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Red lasers from III-nitride nanowire forests on silicon

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Sidewall emissionenhancement for deep UV light-emitting diodes

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Stressed out InAlN/GaN fin- HEMT boosts performance

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Raising GaN Schottky diode breakdown with recessed double-field plate anode

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Opening windows for silicon carbide junction termination extensions

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InGaAs-on-insulator transistors with buried yttrium oxide

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Direct demonstration of 1THz performance in InP HEMTs

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April/May 2015

Electrical injection of rolled-up heterostructure lasers

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Ultraviolet random AlGaN nanowire array lasers

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Implications for LEDs of the shift to large-diameter sapphire wafers

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Discrepancy in carrier density estimates for HVPE GaN templates

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Fireflies, genetics and GaN light-emitting diodes

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Combining van der Waals technologies to make light-emitting diodes

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Hole modulation for increased light output power from InGaN LED

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China to comprise half of all LED epi & chip equipment spending in 2015–2016

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GaN MOCVD reactor installations to total 220 in 2015

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Meeting manufacturing challenges for GaN-on-Si power IC devices

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Direct growth of indium gallium nitride on silicon substrate

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High-mobility channels and moving beyond silicon

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March 2015

High-temperature and concentrated photovoltaic performance of GaInN wells

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Photonic crystal improves light output of InGaN LED by 42% at 350mA

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Plasma-assisted molecular beam epitaxy of indium gallium nitride

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Silver nanowires and compound semiconductor optoelectronics

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More absorbent 2D stacks through layer transfer rather than epitaxy

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Prospect of accurate p-type silicon-doped gallium arsenide antimonide

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Diamond-like carbon used to improve performance of GaN HEMTs

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Reducing gate leakage and current collapse in GaN HEMTs on silicon

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Gallium nitride transistors fabricated on cubic silicon carbide on silicon

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Power electronics market grew in 2014 after two years of stagnation

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February 2015

Power & speed highlights for compound semiconductors

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Millimeter-wave performance of gallium nitride transistors on silicon substrates

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Boron nitride releases GaN transistors from self-heating degradation

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Double heterostructure with InGaN channel demonstrates high mobility

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Resistance memory with all-nitride structure

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Staircase quantum barriers to improve LED efficiency at high current

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Thicker InGaN wells enabled by semi-polar (3031) substrate

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UV LED market to grow from $90m to $520m in 2019

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First 250nm-wavelength nanowire LEDs claimed

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Terahertz radiation from mid-infrared quantum cascade lasers

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January 2015

GaAs/InP wafer bonding with low electrical resistance

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Double metal waveguide yields mid-IR quantum cascade laser with 24.4μm wavelength

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Reducing threshold current in 3μm laser diodes

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Non-polar AlN growth for enhancing deep UV optoelectronics

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Hot holes for improved injection into nitride LEDs

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LED makers to raise technology entry level and find new applications to boost profitability in 2015

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Expanding interest in cubic silicon carbide on silicon substrates

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First application of low-cost deposition of titanium dioxide for GaN MOS-HEMT

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RF performance of junctionless trigate GaN FETs

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Diamond transistor achieves 1530V breakdown voltage

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