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RSS feeds Headline News
16 May 2012
SemiSouth samples first 650V SiC JFETs

Range extended from 1700V through 1200V down to 650V for solar, UPS and automotive markets.

11 May 2012
Record transconductance of 1105mS/mm for GaN/InAlN MIS-HFET

Maximum drain current density reaches 2.77A/mm in N-polar self-aligned device.

11 May 2012
Kopin’s III-V revenue drops18% in Q1

Consolidation of US plants and 10% staff cut to yield savings in June quarter.

10 May 2012
Plasma oxidation of aluminium for insulated nitride transistor gates

Process allows devices with subthreshold behavior near theoretical limit.

10 May 2012
Toshiba invests in Bridgelux to boost GaN-on-Si LED lighting

Firms claim best performing 8” GaN-on-Si LEDs.

9 May 2012
Emcore reports quarterly Fiber Optics revenue up 20% sequentially

Further growth of 10-20% expected in June quarter as Thailand flood recovery progresses.

9 May 2012
GigOptix grows product revenue for 10th quarter

Growth driven by demand for 40G and 100G optical products and datacom parallel devices.

8 May 2012
Electrical efficiency and current crowding in vertical InGaN/SiC LEDs

Series resistance accounts for 25% of power loss at high current, according to Ukraine-based group.

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15 May 2012
Nanoporous GaN for vertical LED lift-off

Electrochemical etch used to create nanoporous GaN/sapphire template.

RSS feeds Other News & Products
16 May 2012

OPEL’s shares start trading in US on OTCQX International

16 May 2012

GigOptix releases preliminary results of modified Dutch auction tender offer

16 May 2012

SemiSouth launches 1700V/1400mΩ SiC JFETs that simplify fast start-up of 3-phase power supplies

16 May 2012

SemiSouth granted its 30th US patent

15 May 2012

Avago and TriQuint settle BAW filter patent dispute

15 May 2012

SPTS wins PVD system order from Chinese GaAs-based RF device foundry

15 May 2012

Eliot Parkinson appointed GM of IQE’s Cardiff III-V facility

15 May 2012

Samsung selects Amalfi’s CMOS PA transmit module for multiple handset platforms

15 May 2012

RFaxis introduces pure-CMOS dual-mode Wi-Fi/Bluetooth RFeIC

14 May 2012

UV LED maker SETi receives Tibbetts Award

14 May 2012

Laser MicroJet firm Synova reorganizes into market-oriented business units

14 May 2012

Hittite claims lowest-power modulator driver for 40G/100G DWDM metro & long-haul

14 May 2012

Hittite launches dual-channel downconverter RFIC for multi-standard diversity receivers

14 May 2012

CIGS PV firm Ascent Solar named Bye Aerospace development partner

11 May 2012

Optogan opens Italian lighting sales office via distributor LEDisOne

11 May 2012

Edwards opens ‘Center for Excellence’ in Hillsboro for customer service & training

10 May 2012

Dow Corning extends SiC epitaxy capabilities with order for additional Aixtron AIX 2800G4 WW Planetary Reactors

10 May 2012

CyOptics selects Verian’s requisition and workflow automation software to enhance SAP functionality

10 May 2012

Emcore completes sale of VCSEL-based product lines to Sumitomo Electric

10 May 2012

Luminus launches LED light engine with embedded drive electronics and IP65 rating

10 May 2012

Seoul Semiconductor adds 3020 Series to mid-power LEDs family

10 May 2012

Millitech launches GaN-based E- and W-band millimeter-wave solid-state power amplifiers

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20 April 2012

New approaches to efficiency droop in nitride & phosphide LEDs
New ideas and results from simulations and experiment at varying temperature down to 80K are emerging for efficiency droop problem of nitride semiconductor LEDs.

20 April 2012

Longer-wavelength lasing in gallium antimonide heterostructure diodes
TU Munich reports room-temperature operation of type-I quantum well GaInAsSb laser at 3.7 m for possible detection of pollutant gases.
20 April 2012

Avoiding high temperatures and plasma improves InGaAs MOSFET performance
Self-aligned gate-last process allows a maximum oscillation frequency of 292GHz and a record low on-resistance of 199 -μm, reports Sweden’s Lund University.
20 April 2012

Flattening transconductance profiles in nitride HEMTs
Ohio State University uses a graded AlGaN layer to create nitride HEMTs with a quasi-three-dimensional electron gas channel.
20 April 2012

Doubling breakdown voltage with double heterostructure
China’s Xidian University shows how an AlGaN/GaN/AlGaN HEMT can also reduce off-state leakage by factor of 100.
20 April 2012

Growth-mode transition to higher UV output
Taiwan researchers use heavy silicon doping to block threading dislocations in ultraviolet nitride LEDs.
20 April 2012

Honeycomb sweetens nitride solar cell performance
A silicon dioxide honeycomb structure that reduces light reflection can increase short-circuit current and fill factor, boosting energy conversion.
20 April 2012

All-silicon light emission through nanocrystal confinement
Silicon nanocrystal-based devices use technology developed for third-generation photovoltaics.
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16 April 2012

Engineering Manager
IQE, Bethlehem, PA (Allentown, Pennsylvania Area), USA.
 
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CrystAL-N - Substrates for epitaxy